Results 111 to 120 of about 2,144,094 (388)

An In Vitro Investigation of Cytotoxic Effects of InP/Zns Quantum Dots with Different Surface Chemistries

Nanomaterials, 2019
Indium phosphide quantum dots (QDs) passivated with zinc sulphide in a core/shell architecture (InP/ZnS) with different surface chemistries were introduced to RAW 264.7 murine “macrophage-like„ cells to understand their potential toxicities ...
Deanna Ayupova, Garima Dobhal, Geoffry Laufersky, Thomas Nann, Renee V. Goreham   +4 more
doaj   +1 more source

Chaos and Interactions in Quantum Dots

, 2001
Quantum dots are small conducting devices containing up to several thousand electrons. We focus here on closed dots whose single-electron dynamics are mostly chaotic.
Alhassid, Y.
core   +1 more source

NanoMOF‐Based Multilevel Anti‐Counterfeiting by a Combination of Visible and Invisible Photoluminescence and Conductivity

Advanced Functional Materials, EarlyView.
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner, Ruben Maile, Murat Cuvalli, Andreas Wolf, Ayisha Komal, Robert Oestreich, Christoph Janiak, Karl Mandel, Alexander Knebel, Klaus Müller‐Buschbaum   +9 more
wiley   +1 more source

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

AIP Advances, 2016
The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si ...
Hamza Qayyum, Chieh-Hsun Lu, Ying-Hung Chuang, Jiunn-Yuan Lin, Szu-yuan Chen   +4 more
doaj   +1 more source

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

, 2014
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance ...
Allison, G., Austing, D. G., Fujita, T., Haffouz, S., Kiyama, H., Larsson, M., Ludwig, A., Morimoto, K., Oiwa, A., Tarucha, S., Teraoka, S., Wieck, A. D.   +11 more
core   +1 more source

Single Pair of Weyl Points Evolve From Spin Group‐Protected Nodal Line in Half‐Metallic Ferromagnet V3S4

Advanced Functional Materials, EarlyView.
A spin group (SG)‐based mechanism is proposed to realize a single pair of Weyl points. PT‐symmetric nodal lines (NLs) persist under T‐breaking, protected by the combination of SG and P symmetry. When considering spin‐orbit coupling, the SG‐protected NL will split into Weyl points, which will also induce anomalous transport phenomena arising from ...
Shifeng Qian, Yao Zhang, Xiaowei Sheng, Xiuxian Yang, Gang Zhang, Junfeng Gao, Xiaotian Wang   +6 more
wiley   +1 more source

Quantum walks of interacting fermions on a cycle graph

, 2016
Quantum walks have been employed widely to develop new tools for quantum information processing recently. A natural quantum walk dynamics of interacting particles can be used to implement efficiently the universal quantum computation.
Fedichkin, Leonid E., Melnikov, Alexey A.   +1 more
core   +1 more source

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Crystals
We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig   +7 more
doaj   +1 more source

Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots

, 2006
A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed.
Akimov, Bayer, Benson, Bester, Christen, Cortez, Grundmann, Heitz, Kavokin, Knill, Kowalik, Kulakovskii, Pohl, Rodt, Santori, Seguin, Stier, Tartakovskii, Young   +18 more
core   +1 more source