Results 91 to 100 of about 1,165,166 (303)

Intracellular distribution of nontargeted quantum dots after natural uptake and microinjection

International Journal of Nanomedicine, 2013
Leona Damalakiene,1 Vitalijus Karabanovas,2 Saulius Bagdonas,1 Mindaugas Valius,3 Ricardas Rotomskis1,21Biophotonics Group, Laser Research Center, Faculty of Physics, 2Biomedical Physics Laboratory, Institute of Oncology, 3Proteomics Center, Institute of
Damalakiene L, Karabanovas V, Bagdonas S, Valius M, Rotomskis R   +4 more
doaj  

Exciton-phonon coupling and phonon-assisted exciton relaxation dynamics in In1-xGaxP quantum dots

Nature Communications
Quantum dots leverage quantum confinement to modify the electronic structure of materials, separating electronic transitions from the composition of the corresponding bulk material. With ternary quantum dots, the composition may be varied continuously so
Beiye C. Li, Kailai Lin, Ping-Jui E. Wu, Aritrajit Gupta, Kaiyue Peng, Siddhartha Sohoni, Justin C. Ondry, Zirui Zhou, Caitlin C. Bellora, Young Jay Ryu, Stella Chariton, David J. Gosztola, Vitali B. Prakapenka, Richard D. Schaller, Dmitri V. Talapin, Eran Rabani, Gregory S. Engel   +16 more
doaj   +1 more source

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Crystals
We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig   +7 more
doaj   +1 more source

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

AIP Advances, 2016
The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si ...
Hamza Qayyum, Chieh-Hsun Lu, Ying-Hung Chuang, Jiunn-Yuan Lin, Szu-yuan Chen   +4 more
doaj   +1 more source

Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots

Nanomaterials, 2019
The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum ...
Si-Cong Tian, Huan-Yu Lu, Hang Zhang, Li-Jie Wang, Shi-Li Shu, Xin Zhang, Guan-Yu Hou, Zi-Ye Wang, Cun-Zhu Tong, Li-Jun Wang   +9 more
doaj   +1 more source

Nanotechnology and molecular cytogenetics: the future has not yet arrived [PDF]

, 2010
Quantum dots (QDs) are a novel class of inorganic fluorochromes composed of nanometer-scale crystals made of a semiconductor material. They are resistant to photo-bleaching, have narrow excitation and emission wavelengths that can be controlled by ...
Ioannou, Dimitris, Griffin, Darren K.
core   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

The Iontronic Quantum Dot

Nano Letters
Semiconductor quantum dots (QDs) are key building blocks for quantum technologies with applications in quantum computation, communication, and sensing. QD device architectures rooted in conventional solid-state device fabrication paradigms are grappled with complex protocols to balance ease of realization, scalability, and transport properties.
Domenic Prete, Valeria Demontis, Valentina Zannier, Lucia Sorba, Fabio Beltram, Francesco Rossella   +5 more
openaire   +2 more sources

Theory of polaron resonance in quantum dots and quantum-dot molecules [PDF]

Journal of Applied Physics, 2007
This work presents the theory of exciton coupling to photons and longitudinal optical (LO) phonons in quantum dots (QDs) and quantum-dot molecules (QDMs). Resonant-round trips of the exciton between the ground (bright) and excited (dark or bright) states, mediated by the LO phonon, alter the decay time and yield the Rabi oscillation.
openaire   +2 more sources

Colloidal Arenethiolate-Capped PbS Quantum Dots: Optoelectronic Properties, Self-Assembly, and Application in Solution-Cast Photovoltaics [PDF]

, 2013
Suitable postsynthesis surface modification of lead-chalcogenide quantum dots (QDs) is crucial to enable their integration in photovoltaic devices. Here we exploit arenethiolate anions to completely replace pristine oleate ligands on PbS QDs in the ...
L. Carbone, A. Loiudice, Davide Altamura, Zoobia Ameer, Giuseppe Gigli, COZZOLI, Pantaleo Davide, GIGLI, Giuseppe, Cinzia Giannini, Giuseppe Maruccio, Aurora Rizzo, D. Altamura, Anna Loiudice, GIANSANTE, CARLO, MARUCCIO, Giuseppe, Z. Ameer, M. R. Belviso, Luigi Carbone, Carlo Giansante, P. Davide Cozzoli, Maria R. Belviso, C. Giannini, A. Rizzo   +21 more
core   +1 more source