Results 181 to 190 of about 885,186 (351)

Self‐organized Criticality in Neuromorphic Nanowire Networks With Tunable and Local Dynamics

open access: yesAdvanced Functional Materials, EarlyView.
Memristive nanowire networks (NWNs) are shown to be electrically tunable to a critical state where specific local dynamics evaluated by multiterminal characterization are exploited as feature selection in nonlinear transformation (NLT) tasks.
Fabio Michieletti   +3 more
wiley   +1 more source

In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

open access: diamond, 1970
Suwit Kiravittaya   +4 more
openalex   +2 more sources

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

Spin Blockade in Non-linear Transport through Quantum Dots [PDF]

open access: green, 1994
Dietmar Weinmann   +4 more
openalex   +1 more source

Multi‐Pathway Upconversion Emission in Symmetry‐Broken Nanocavities: Broadband Multiresonant Enhancement and Anti‐Correlated Interfacial Sensitivity

open access: yesAdvanced Functional Materials, EarlyView.
Symmetry‐broken plasmonic nanoantenna arrays achieve broadband multiresonant enhancement of second harmonic generation (SHG), third harmonic generation (THG), and upconversion photoluminescence (UCPL), under femtosecond laser excitation across the near‐infrared range (1000–1600 nm).
Elieser Mejia   +9 more
wiley   +1 more source

Quantized current in a quantum-dot turnstile using oscillating tunnel barriers

open access: green, 1991
Leo P. Kouwenhoven   +4 more
openalex   +2 more sources

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc2Te4 With Magnetism‐Driven Nonlinear Transport

open access: yesAdvanced Functional Materials, EarlyView.
EuSc₂Te₄, an antiferromagnetic semiconductor, exhibits a nonlinear Hall effect (NLHE) characterized by quadratic current–voltage behavior. Combined experimental and theoretical studies reveal that this NLHE is linked to its antiferromagnetism and involves contributions from the quantum metric.
Seng Huat Lee   +15 more
wiley   +1 more source

Home - About - Disclaimer - Privacy