Results 61 to 70 of about 1,165,166 (303)

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

Advanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu, Jun Xu, Minmin Fan, Jingcheng Xu, Mengyuan Li, Yun Gong, Weiwei Yang, Lei Li, Yong Zhou, Deqiang Zhao, Yuhua Xue, Xingtao Xu, Chang Q. Sun, Liming Dai   +13 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Charging dynamics of a floating gate transistor with site-controlled quantum dots [PDF]

, 2014
The authors gratefully acknowledge financial support from the European Union (FPVII (2007–2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria.A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs ...
L. Worschech, Hartmann, F., P. Maier, C. Schneider, Worschech, L., M. Emmerling, Schneider, C., S. Höfling, Emmerling, M., Höfling, S., Kamp, M., M. Kamp, Maier, P., F. Hartmann   +13 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Novel function of ribosomal protein RPL14B: regulation of CdSe quantum dots biosynthesis in living Saccharomyces cerevisiae cells

Microbial Cell Factories
Biosynthesis of CdSe quantum dots is the process of converting metal ions into semiconductor nanomaterials. Studies have shown that CdSe quantum dots synthesized by Saccharomyces cerevisiae are rich in ribosomal proteins, but the role of ribosomal ...
Jiye Liu, Yong Li, Jiawei Tu, Daiwen Pang, Lipeng Zhong, Zhixiong Xie   +5 more
doaj   +1 more source

Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells [PDF]

, 2008
In this work we report the stacking of 10 and 50 InAs quantum dots layers using 2 monolayers of GaP for stress compensation and a stack period of 18 nm on GaAs (001) substrates. Very good structural and optical quality is found in both samples.
Ripalda Cobián, Jose María, Alén Millán, Benito, González Soto, Luisa, González Taboada, Alfonso, González Diez, M. Yolanda, Alonso Alvarez, Diego, Briones Fernández-Pola, Fernando, Sánchez, Almudena M., Luque López, Antonio, García Martín, Jorge Miguel, Molina Rubio, Sergio Ignacio, Martí Vega, Antonio   +11 more
core  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Scientific Reports, 2017
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for ...
Luca Sapienza, Jin Liu, Jin Dong Song, Stefan Fält, Werner Wegscheider, Antonio Badolato, Kartik Srinivasan   +6 more
doaj   +1 more source

Simple Synthesis Method and Characterizations of Aggregation-Free Cysteamine Capped PbS Quantum Dot

Applied Sciences, 2019
Quantum dots have diverse chemical properties with different ligands attached on the surface. The cysteamine has been used as a ligand for various quantum dots because it has high solubility in water, and it facilitates binding of quantum dot and gold ...
Daekyung Kang, Mareddi Bharath Kumar, Changhee Son, Hongsik Park, Jonghoo Park   +4 more
doaj   +1 more source

Holes in nanowires and quantum dots : spin qubits, majorana fermions, and hole and hyperfine interactions [PDF]

, 2015
In the last decades much scientific effort was spent on manufacturing and understanding the properties of smaller and smaller condensed matter systems.
Maier, Franziska
core   +1 more source