Results 111 to 120 of about 24,428 (295)

Science‐Towards‐Technology Breakthrough in CO2 Electroreduction: Multiphysics, Multiscale, and Artificial Intelligence Insights

Advanced Materials, EarlyView.
Electrochemical CO2RR is a key technology for converting CO2 into chemicals, but there remains a gap between “laboratory science” and “engineering practice” in current research. This review establishes a multi‐scale research framework, encompassing atomic‐level characterization, microenvironment regulation, external field‐assisted optimization, and AI ...
Ping Hong, Changfan Xu, Huaping Zhao, Yong Lei   +3 more
wiley   +1 more source

Artificial neural network syndrome decoding on IBM quantum processors

Physical Review Research
Syndrome decoding is an integral but computationally demanding step in the implementation of quantum error correction for fault-tolerant quantum computing.
Brhyeton Hall, Spiro Gicev, Muhammad Usman   +2 more
doaj   +1 more source

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

Advanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief, Swagato Sarkar, Anik Kumar Ghosh, Osvalds Verners, Kamal Kumar Meena, Su‐Hyeong Lee, Soosang Chae, Tobias A. F. König, Beate Krause, Andreas Fery, Mehmet Sait Özer, Anindya Nag, Amit Das   +12 more
wiley   +1 more source

Adaptive Syndrome Extraction

PRX Quantum
Device error rates on current quantum computers have improved enough to where demonstrations of error correction below break even are now possible. Still, the circuits required for quantum error correction introduce significant overhead and sometimes ...
Noah Berthusen, Shi Jie Samuel Tan, Eric Huang, Daniel Gottesman   +3 more
doaj   +1 more source

Bits to Qubits: A Comparative Study of Memory Management in Classical and Quantum Systems

IEEE Access
In the near future, as quantum and classical systems coexist, managing hybrid systems will require efficient conversion between bits and qubits. Therefore, understanding memory management for both classical and quantum systems is essential.
Pradeep Lamichhane, Danda B. Rawat
doaj   +1 more source

Removing leakage-induced correlated errors in superconducting quantum error correction. [PDF]

Nat Commun, 2021
McEwen M, Kafri D, Chen Z, Atalaya J, Satzinger KJ, Quintana C, Klimov PV, Sank D, Gidney C, Fowler AG, Arute F, Arya K, Buckley B, Burkett B, Bushnell N, Chiaro B, Collins R, Demura S, Dunsworth A, Erickson C, Foxen B, Giustina M, Huang T, Hong S, Jeffrey E, Kim S, Kechedzhi K, Kostritsa F, Laptev P, Megrant A, Mi X, Mutus J, Naaman O, Neeley M, Neill C, Niu M, Paler A, Redd N, Roushan P, White TC, Yao J, Yeh P, Zalcman A, Chen Y, Smelyanskiy VN, Martinis JM, Neven H, Kelly J, Korotkov AN, Petukhov AG, Barends R.   +50 more
europepmc   +1 more source

Isotopically Selected Co‐Doping of 121Sb and 123Sb Pairs in Silicon

Advanced Materials, EarlyView.
Pairs of 121Sb and 123Sb atoms are doped into silicon using single cluster implantation and found to reside substitutionally within the crystal lattice due to self‐annealing with a Sb‐to Sb separation of ≈2 nm. Molecular dynamics simulations reproduce the observed experimental results and single ion cluster detection efficiencies of 94% are ...
Mason Adshead, Maddison Coke, Evan Tillotson, Tomas F Bouvier, Artem Mkrtychyan, Kexue Li, Sam Sullivan‐Allsop, Ricardo Egoavil, William Thornley, Yi Cui, Christopher M. Gourlay, Katie L Moore, Flyura Djurabekova, Sarah J Haigh, Richard J Curry   +14 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Duality of Quantum and Classical Error Correction Codes: Design Principles and Examples [PDF]

, 2019
Zunaira Babar, Daryus Chandra, Hung Viet Nguyen, Panagiotis Botsinis, Dimitrios Alanis, Soon Xin Ng, Lajos Hanzo   +6 more
openalex   +1 more source

Automated discovery of logical gates for quantum error correction (with Supplementary (153 pages))

, 2022
Hongxiang Chen, Michael Vasmer, Nikolas P. Breuckmann, Edward R. Grant   +3 more
openalex   +2 more sources