Results 181 to 190 of about 1,140,380 (316)
Quantum error correction for continuously detected errors [PDF]
, 2003 Charlene Ahn +2 more
openalex +1 more source
Subsurface State Bilayer in Tetragonal Ferroelectric BaTiO3
Advanced Materials Interfaces, EarlyView.The subsurface Ba2+disorder, reveals the pairs of O vacancies (VO++$V_O^{ + + }$ s) and small polarons (SPe‐SPe−$SP_e^ - $ s) (Figure a–b), with the charge balance, as the following: Ti3++[VO+++SPe−]pair↔Ti4+${{T}_i}^{3 + } + {{[V_O^{ + + } + SP_e^ - ]}_{pair}} \leftrightarrow T_i^{4 + }$ which is consistent with observed low‐energy electron ...
Junhao Chen +12 more
wiley +1 more source
Linear Logic and Quantum Error Correcting Codes [PDF]
arXivWe develop a point of view on reduction of multiplicative proof nets based on quantum error-correcting codes. To each proof net we associate a code, in such a way that cut-elimination corresponds to error correction.
arxiv
Quantum Error Correction via Codes over GF(4)
, 1996 A.R. Calderbank +3 more
openalex +2 more sources
Combined error correction techniques for quantum computing architectures [PDF]
, 2003 Mark Byrd, Daniel A. Lidar
openalex +1 more source
Advanced Materials Interfaces, EarlyView.By directly comparing the impact of dual interfacial passivation by ammonium‐, sulfonium‐ and sulfoxonium‐based cations on the performance and stability of triple cation metal halide perovskite solar cells, it is found that it is the exact molecular structure of the cation, rather than the nature of the onium that influences the efficacy of passivation
Oscar Telschow +9 more
wiley +1 more source
On entanglement distillation and quantum error correction for unknown states and channels [PDF]
, 2003 Paweł Horodecki
openalex +1 more source
Molecular Nanomagnets as Qubits with Embedded Quantum-Error Correction. [PDF]
J Phys Chem Lett, 2020 Chiesa A +5 more
europepmc +1 more source
Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films
Advanced Materials Interfaces, EarlyView.This work demonstrates how the topologically protected conduction in Sb2Te3 thin films can be extended from few‐mm2 samples’ area up to larger areas of several cm2 Si(111) wafers. The reported findings represent a breakthrough for the future technology scale‐up of topological insulators for applications such as spintronics, thermoelectrics, and quantum
Ali Shafiei +12 more
wiley +1 more source