Results 161 to 170 of about 1,030,100 (373)

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Analysis of the Performance about Actual Quantum Key Distribution System Based on BB84 Protocol [PDF]

, 2012
Kai-guo Huang
openalex   +1 more source

Through Diamond Robust Surface Enhanced Raman Spectroscopy

Advanced Functional Materials, EarlyView.
Thin film diamond growth offers a unique opportunity for Surface Enhanced Raman Spectroscopy (SERS); the encapsulation of plasmonic nanostructures within a transparent, chemically stable, and physically robust coating. The diamond acts as both a window and protective layer, enabling illumination of the plasmonic nanostructures through the diamond ...
Kieran N. Twaddle, Rebecca J. Watkins, Ralph J. Moors, Massimiliano L.A. Ramsay, Richard B. Jackman   +4 more
wiley   +1 more source

Quantum Key Distribution

, 2023
AbstractA new class of computers, so-called quantum computers, will soon be able to crack common encryption algorithms. Quantum key distribution is a promising solution to stay secure in the age of the quantum computer, which is progressively getting industrialized in recent years.
openaire   +1 more source

Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions

Advanced Functional Materials, EarlyView.
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan, Joe Sunny, Tamer Karaman, Reshma Peremadathil‐Pradeep, Emily Darwin, Felix Büttner, Dieter Suess, Hans Josef Hug, Manfred Albrecht   +8 more
wiley   +1 more source

Feasibility of 300 km quantum key distribution with entangled states [PDF]

, 2009
Thomas Scheidl, Rupert Ursin, Alessandro Fedrizzi, Sven Ramelow, Xiao‐Song Ma, Thomas Herbst, Robert Prevedel, Lothar Ratschbacher, Johannes Kofler, Thomas Jennewein, Anton Zeilinger   +10 more
openalex   +1 more source

Imaging of Biphoton States: Fundamentals and Applications

Advanced Functional Materials, EarlyView.
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley   +1 more source

Frequency-bin entanglement-based Quantum Key Distribution

npj Quantum Information
Entanglement is an essential ingredient in many quantum communication protocols. In particular, entanglement can be exploited in quantum key distribution (QKD) to generate two correlated random bit strings whose randomness is guaranteed by the nonlocal ...
Noemi Tagliavacche, Massimo Borghi, Giulia Guarda, Domenico Ribezzo, Marco Liscidini, Davide Bacco, Matteo Galli, Daniele Bajoni   +7 more
doaj   +1 more source

Unconditional Security of a Three State Quantum Key Distribution Protocol [PDF]

, 2005
Jean-Christian Boileau, Kiyoshi Tamaki, J. Batuwantudawe, Raymond Laflamme, Joseph M. Renes   +4 more
openalex   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source