Time-bin encoded quantum key distribution over 120 km with a telecom quantum dot source. [PDF]
Wang J +13 more
europepmc +1 more source
On the Robustness of Reference-Frame-Independent Quantum Key Distribution Systems Against Active Probing Attacks [PDF]
S. N. Molotkov, A. A. Shcherbachenko
openalex +1 more source
High‐Throughput Exfoliation of Optoelectronic‐Grade MoS2 via Turbulent‐Flow Wet Jet Milling
A scalable wet jet milling exfoliation method is demonstrated for producing optoelectronic‐grade MoS2 nanosheets using environmentally friendly ethyl cellulose in ethanol dispersion media. Guided by fluid dynamics modeling, this approach is optimized to achieve record‐high exfoliation throughput and concentration.
Maryam Khalaj +7 more
wiley +1 more source
Autonomous recognition of erroneous raw key bit bias in quantum key distribution. [PDF]
Young M, Lucamarini M, Pirandola S.
europepmc +1 more source
Device-independent quantum key distribution over 100 km with single atoms
Bo-Wei Lu +17 more
openalex +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Hacking continuous-variable quantum key distribution using the photorefractive effect on proton-exchanged/annealed-proton-exchanged waveguide. [PDF]
Mao N +5 more
europepmc +1 more source
Quantum Key Distribution for Critical Infrastructures: Towards Cyber-Physical Security for Hydropower and Dams. [PDF]
Green A +4 more
europepmc +1 more source
Topology-Hiding Path Validation for Large-Scale Quantum Key Distribution Networks
Stephan Krenn +4 more
openalex +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source

