Results 121 to 130 of about 1,094,572 (279)

Designer Moiré Quantum Materials Enabled by Freestanding Oxide Membranes in Twisted and Hybrid Bilayers

open access: yesAdvanced Science, EarlyView.
Freestanding oxide membranes transform twistronics by enabling deterministic stacking, strain release, and integration with two‐dimensional materials. A unified framework links local atomic registry to structural reconstruction, polar textures, charge modulation, flat bands, and magnetic responses, while identifying the fabrication and characterization
Puneet Kaur, Rahul, Jan‐Chi Yang
wiley   +1 more source

Structural Basis of Lymphangiogenic Receptor VEGFR‐3 Activation Mediated by Distinctive Clustering of the Ligand–Receptor Complex

open access: yesAdvanced Science, EarlyView.
VEGF‐C and its receptor VEGFR‐3 are critical for lymphangiogenesis. Cryo‐EM structures of the VEGFR‐3/VEGF‐C ectodomain complex reveal a canonical 2:2 ligand–receptor hetero‐tetramer that further assembles into higher‐order clusters beyond simple receptor dimerization.
Ryeongeun Cho   +6 more
wiley   +1 more source

Updatable Closed‐Form Evaluation of Arbitrarily Complex Multiport Network Connections

open access: yesAdvanced Electronic Materials, EarlyView.
The inverse design of electrically large wave devices often uses reduced‐order multiport models with discrete optimization, requiring many evaluations of complex interconnections between subsystems that differ only in a few blocks. This paper introduces a closed‐form framework enabling efficient Woodbury low‐rank updates of related, previous ...
Hugo Prod'homme, Philipp del Hougne
wiley   +1 more source

Quantum Computing: A Concise Introduction

open access: yesEncyclopedia
Quantum computing is an emerging field in computing technology that harnesses the principles of quantum mechanics—including superposition, entanglement, and quantum tunneling—to process information in fundamentally new ways. While classical computers use
Brady D. Lund, Sakib Shahriar
doaj   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

Quantum data parallelism in quantum neural networks

open access: yesPhysical Review Research
Quantum neural networks hold promise for achieving lower generalization error bounds and enhanced computational efficiency in processing certain datasets.
Sixuan Wu, Yue Zhang, Jian Li
doaj   +1 more source

A quantum phase transition in a quantum external field: Superposing two magnetic phases

open access: yes, 2012
We study an Ising chain undergoing a quantum phase transition in a quantum magnetic field. Such a field can be emulated by coupling the chain to a central spin initially in a superposition state.
Damski, Bogdan (Theoretical Division, Los Alamos National Laboratory)   +2 more
core   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

CUDA Quantum

open access: yes
<p>The 0.7.0 release adds support for using NVIDIA Quantum Cloud, giving you access to our most powerful GPU-accelerated simulators even if you don't have an NVIDIA GPU. With 0.7.0, we have furthermore greatly increased expressiveness of the Python
The CUDA Quantum development team
core   +2 more sources

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci   +6 more
wiley   +1 more source

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