Results 1 to 10 of about 1,513,497 (299)
Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum [PDF]
NanomaterialsWe analyze theoretically an InGaN/GaN n-i-p diode with a single quantum well supporting only one bound state. The bottom parts of the diode, namely the first barrier and the quantum well, are heavily n-doped with silicon at 5 × 1019 cm−3 to ensure a high
Marta Gładysiewicz-Kudrawiec +2 more
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Bias-Tunable Quantum Well Infrared Photodetector [PDF]
NanomaterialsWith the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field.
Gyana Biswal +6 more
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Influence of backlighting on current-voltage characteristics of InGaN / GaN-based structures with back-shift [PDF]
Известия Саратовского университета. Новая серия: Физика, 2021 Object of study. We investigate Hewlett Packard green LEDs (λmax = 525 nm at room temperature) based on an InGaN solid solution with quantum wells. Purpose of the Study.
Vostretsov, Dmitry Y. +3 more
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Quantum chaos in quantum wells [PDF]
Physica D: Nonlinear Phenomena, 1999 25 pages, 15 figures, accepted for publication in Physica ...
Narimanov, E. E., Stone, A. Douglas
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Asymmetric Ge/SiGe coupled quantum well modulators
Nanophotonics, 2021 We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration.
Zhang Yi +6 more
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IEEE Photonics Journal, 2023 We numerically analysed the single mode stability of of multi quantum well and quantum dot DFB laser diodes in the presence of external optical feedback.
G. Morthier
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Noncommutative gravitational quantum well [PDF]
Physical Review D, 2005 Revtex4, 9 ...
O. BERTOLAMI +4 more
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AlGaN-Delta-GaN Quantum Well for DUV LEDs
Photonics, 2020 AlGaN-delta-GaN quantum well (QW) structures have been demonstrated to be good candidates for the realization of high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs). However, such heterostructures are still not fully understood.
Cheng Liu, Bryan Melanson, Jing Zhang
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Nanomaterials, 2023 We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength ...
Viktor Shamakhov +8 more
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A Study on the Photoelectric Properties of Dual Ridge Terahertz Quantum Cascade Lasers at 3.1 THz
Nanomaterials, 2022 High-power, incoherent THz array sources are widely desired in some applications due to their low energy, unique terahertz fingerprint, and image. In this work, a dual ridge terahertz quantum cascade laser lasing at 3.1 THz is presented, and the device’s
Qi Yang +9 more
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