Results 11 to 20 of about 255,662 (266)

Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals, 2020
The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations.
Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng, Shouhuan Zhou   +10 more
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Theoretical Investigation on Microcavity Coupler for Terahertz Quantum-Well Infrared Photodetectors

IEEE Access, 2020
Resonant behaviors and absorption enhancement of metallic grating-dielectric-metal (GDM) microcavity are theoretically investigated. The GDM structure is treated as periodic unit cells of two serially-connected metal-dielectric-metal (MDM) and air ...
Xuguang Guo, Yuxiang Ren, Guixue Zhang, Anqi Yu, Xiaoshuang Chen, Yiming Zhu   +5 more
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Coherent Control of Perfect Optical Vortex Through Four-Wave Mixing in an Asymmetric Semiconductor Double Quantum Well

Frontiers in Physics, 2022
A scheme for the coherent control of perfect optical vortex (POV) in an asymmetric semiconductor double quantum well (SDQW) nanostructure is proposed by exploiting the tunneling-induced highly efficient four-wave mixing (FWM).
Xu Deng, Tao Shui, Wen-Xing Yang
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Deep learning neural network for approaching Schrödinger problems with arbitrary two-dimensional confinement

Machine Learning: Science and Technology, 2023
This article presents an approach to the two-dimensional Schrödinger equation based on automatic learning methods with neural networks. It is intended to determine the ground state of a particle confined in any two-dimensional potential, starting from ...
A Radu, C A Duque
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Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

IEEE Journal of the Electron Devices Society, 2017
InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method.
Zhongliang Qiao, Xiaohong Tang, Xiang Li, Baoxue Bo, Xin Gao, Yi Qu, Chongyang Liu, Hong Wang   +7 more
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Growth and Characterization of GaN/In_xGa_1−xN/In_yAl_1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

Crystals, 2022
The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1−xN QW in photoluminescence measurement was estimated to be 2.
Huei-Jyun Shih, Ikai Lo, Ying-Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin, Yi-Ying Lu, Hui-Chun Huang   +6 more
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CALCULATION OF ELASTICALLY STRESSED QUANTUM WELLS HETEROSTRUCTURE AlXGaYIn1-X-YAs/InP FOR EFFICIENT DIODE LASERS

Российский технологический журнал, 2018
The compositions of epitaxial layers forming quantum-well heterostructures AlxGayIn1-x-yAs / InP for laser diodes with the radiation wavelength of 1.55 μm are calculated.
V. N. Svetogorov, R. Kh. Akchurin, A. A. Marmalyuk, M. A. Ladugin, I. V. Yarotskaya   +4 more
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Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature

Nanomaterials, 2022
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically ...
Vladimir V. Utochkin, Konstantin E. Kudryavtsev, Alexander A. Dubinov, Mikhail A. Fadeev, Vladimir V. Rumyantsev, Anna A. Razova, Egor V. Andronov, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Frederic Teppe, Sergey V. Morozov   +12 more
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PbSe/CdTe single quantum well infrared detectors

AIP Advances, 2017
We report on the fabrication and characterization of a new type of mid-infrared photodetector. The infrared sensitive element of the detector is a PbSe single quantum well (SQW) embedded in an intrinsic region of a CdTe p-i-n diode. Electron-beam-induced
S. Chusnutdinow, M. Szot, T. Wojtowicz, G. Karczewski   +3 more
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Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL) [PDF]

Journal of Optoelectronical Nanostructures, 2020
: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method ...
Abbas Ghadimi, Mohamad Ahmadzadeh
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