Results 211 to 220 of about 255,662 (266)

Nonlinear gain effects in quantum well, quantum well wire, and quantum well box lasers

IEEE Journal of Quantum Electronics, 1991
The nonlinear gain effects due to the spectral hole burning in quantum well (QW), quantum well wire (QWW), and quantum well box (QWB) lasers are discussed. It is found that the gain nonlinearity is enhanced by the quantum confinement of carriers, and is further enhanced in the QWW and QWB lasers.
T. Takahashi, Y. Arakawa
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Quantum Well Shape Modification in Quaternary Quantum Wells

MRS Proceedings, 1991
ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies.
Emil S. Köteles, A. N. M. Masum Choudhury, A. Levy, B. Elman, P. Melman, M. A. Koza, R. Bhat   +6 more
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Quantum control in quantum wells

Physical Review B, 1998
We present calculations of quantum control of wave packet motion and THz emission in an asymmetric double-quantum-well structure. A genetic algorithm is used to search for the laser pulse that best drives an electronic wave packet to a desired target, or goal.
Jeffrey L. Krause, David H. Reitze, Gary D. Sanders, Alex V. Kuznetsov, Christopher J. Stanton   +4 more
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Transient photoluminescence spectra of GaAs/AlGaAs quantum wells, quantum well wires, and quantum well boxes

Chinese Physics Letters, 1990
The interaction of the electrons with the phonons in GaAs/AlGaAs quantum wells, quantum well wires, and quantum well boxes has been studied by meansuring their time resolved photoluminescence (PL) spectra. In the quantum well (QW) system, relaxation time of the electron energy of the narrower well is shorter than that of the wider well.
Cheng Wenqin, Huang Yi, Zhou Junming, Feng Wei, Wang Hezhou, She Weilong, Huang Xuguang, Lin Weizhu, Yu Zhenxin, Xu Geng   +9 more
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Electron waveguiding in quantum wells, voltage- induced quantum wells, and quantum barriers

Optical Society of America Annual Meeting, 1991
Recent experiments have produced ballistic electron transport over micron lengths in semiconductor 2-D electron gas (2DEG) systems. This has made possible the demonstration of electron devices that exhibit impressive optical like behavior.1-3 In these devices, the quantum well at the 2DEG interface acts as a slab waveguide for ballistic electron waves.
D. W. Wilson, E. N. Glytsis, T. K. Gaylord   +2 more
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EXCITONS IN GaAs QUANTUM WELLS

Journal of Luminescence, 1985
Abstract This paper attempts to summarize some of the salient properties of excitons in GaAs quantum wells and in doing so it will emphasize work at AT&T Bell Labs with which the authors have been associated. Although the text relies heavily on published material, an effort has been made to stress new material, and where feasible, unpublished aspects,
R.C. Miller, D.A. Kleinman
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Terahertz quantum well photodetectors

SPIE Proceedings, 2005
SPIE OpticsEast, 24-28 October 2005 ...
Springthorpe, Anthony, Liu, Hui, Luo, H., Song, C., Wasilewski, Zbigniew   +4 more
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Photoionization of impurities in quantum wells

Solid State Communications, 1992
The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.
ELSAID, M, TOMAK, M
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Theory of magnetoexcitons in quantum wells

Physical Review Letters, 1987
A theory of excitons in a high magnetic field normal to the confining quantum well of III-V semiconductors is constructed. The theory dictates that all the observable optical transitions must involve bound excitons, that the field dependence is nonlinear, and that extra spectral lines arise from the mixing of heavy- and light-hole character in the ...
, Yang, , Sham
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Quantum-Well Devices

1991
In all of the devices discussed in previous chapters the dimensions of device structures were large compared to the wavelength of electrons in the device. When the dimensions of the structure are reduced to the point at which they are approaching the same order of magnitude as the electron wavelength some unique properties are observed.
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