Results 21 to 30 of about 1,513,497 (299)

Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature

Nanomaterials, 2022
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically ...
Vladimir V. Utochkin, Konstantin E. Kudryavtsev, Alexander A. Dubinov, Mikhail A. Fadeev, Vladimir V. Rumyantsev, Anna A. Razova, Egor V. Andronov, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Frederic Teppe, Sergey V. Morozov   +12 more
doaj   +1 more source

CALCULATION OF ELASTICALLY STRESSED QUANTUM WELLS HETEROSTRUCTURE AlXGaYIn1-X-YAs/InP FOR EFFICIENT DIODE LASERS

Российский технологический журнал, 2018
The compositions of epitaxial layers forming quantum-well heterostructures AlxGayIn1-x-yAs / InP for laser diodes with the radiation wavelength of 1.55 μm are calculated.
V. N. Svetogorov, R. Kh. Akchurin, A. A. Marmalyuk, M. A. Ladugin, I. V. Yarotskaya   +4 more
doaj   +1 more source

Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells

New Journal of Physics, 2023
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator (TI) based on InAs/GaSb/InAs trilayer quantum wells.
M Meyer, S Schmid, F Jabeen, G Bastard, F Hartmann, S Höfling   +5 more
doaj   +1 more source

Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity

IEEE Photonics Journal, 2023
Vertical cavity surface emitting lasers (VCSEL) are of great interest for photonic and telecom applications, however challenges in fabrication of efficient VSCEL GaN devices are yet to be resolved.
Andrei Sarua, Jon Pugh, Edmund Harbord, Martin Cryan   +3 more
doaj   +1 more source

Spatio-temporal dynamics of quantum-well excitons [PDF]

, 2002
We investigate the lateral transport of excitons in ZnSe quantum wells by using time-resolved micro-photoluminescence enhanced by the introduction of a solid immersion lens. The spatial and temporal resolutions are 200 nm and 5 ps, respectively.
A. Vertikov, A. Vertikov, A.C. Schaefer, A.F.G. Monte, A.F.G. Monte, A.F.G. Monte, A.V. Shchegrov, B. Dal Don, B. Hanewinkel, B.A. Nechay, D. Hommel, D. Oberhauser, D.S. Citrin, F.A. Majumder, F.P. Logue, H. Akiyama, H. Hillmer, H. Hillmer, H. Hillmer, H. Hillmer, H. Kalt, H. Kalt, H. Schwab, H. Zhao, H. Zhao, H. Zhao, H.W. Yoon, Hui Zhao, I.-K. Oh, J. Erland, J. Feldmann, J. Hegarty, J.H. Collet, J.L. Educato, K. Hattori, K. Ohkawa, K. Siantidis, L.-L. Chao, L.M. Smith, L.M. Smith, M. Achermann, M. Artaki, M. Gulia, M. Gurioli, M. Mosko, M. Umlauff, M. Vollmer, N. Pelekanos, P. Lugli, P.K. Basu, P.W.M. Blom, R.P. Stanley, S. Barbieri, S. Moehl, S.D. Baranovskii, T. Takagahara, T.C. Damen, V. Malyarchuk, V. Mizeikis, Y. Takahashi, Y. Takahashi, Y. Takahashi   +61 more
core   +2 more sources

PbSe/CdTe single quantum well infrared detectors

AIP Advances, 2017
We report on the fabrication and characterization of a new type of mid-infrared photodetector. The infrared sensitive element of the detector is a PbSe single quantum well (SQW) embedded in an intrinsic region of a CdTe p-i-n diode. Electron-beam-induced
S. Chusnutdinow, M. Szot, T. Wojtowicz, G. Karczewski   +3 more
doaj   +1 more source

Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL) [PDF]

Journal of Optoelectronical Nanostructures, 2020
: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method ...
Abbas Ghadimi, Mohamad Ahmadzadeh
doaj  

Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector

AIP Advances, 2018
An independently controllable, two-band quantum well infrared photo-detector (QWIP) based on the ZnCdSe/ZnCdMgSe material system is characterized. The two-band detector consists of two stacks of quantum wells absorbing in the mid- and long-wavelength ...
Yasin Kaya, Arvind Ravikumar, Guopeng Chen, Maria C. Tamargo, Aidong Shen, Claire Gmachl   +5 more
doaj   +1 more source

Recent Advances in Si-Compatible Nanostructured Photodetectors

Technologies, 2023
In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge,
Rahaf Douhan, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, Kristina Khomyakova   +5 more
doaj   +1 more source

Physical model of quantum-well infrared photodetectors [PDF]

, 2004
A fully quantum mechanical model for electron transport in quantum well infrared photodetectors is presented, based on a self-consistent solution of the coupled rate equations. The important macroscopic parameters like current density, responsivity and
Harrison, P., Ikonic, Z., Indjin, D., Jovanovic, V.D.   +3 more
core   +1 more source