Results 31 to 40 of about 1,513,497 (299)

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Crystals, 2022
High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850
Jianwei Li, Jia Zhao, Feng Gao
doaj   +1 more source

In-Well and Barrier Coupling Pump of Semiconductor Disk Laser

IEEE Photonics Journal, 2022
We report an in-well and barrier coupling pump scheme of semiconductor disk laser (SDL). An in-well-absorbed (940 nm) and a barrier-absorbed (808 nm) pump source were used to measure laser output characteristics. The output power of the coupling pump can
Jian Feng, Bo Meng, Cunzhu Tong, Andreas Popp, Berthold Schmidt, Lijie Wang, Huanyu Lu, Yanjing Wang, Xin Zhang, Lijun Wang   +9 more
doaj   +1 more source

Time-Space Noncommutativity in Gravitational Quantum Well scenario [PDF]

, 2006
A novel approach to the analysis of the gravitational well problem from a second quantised description has been discussed. The second quantised formalism enables us to study the effect of time space noncommutativity in the gravitational well scenario ...
A. Saha, A. Saha, A.H. Chamseddine, B. Chakraborty, B. Melic, C.D. Carone, C.D. Carone, C.S. Chu, D.A. Eliezer, E.G. Floratos, H.S. Snyder, H.S. Snyder, I. Mocioiu, I.F. Riad, J. Gomis, J. Jaeckel, J. Wess, J.J. Sakurai, L. Alvarez Gaume, L. Alvarez-Gaume, L.D. Faddeev, L.D. Landau, M. Chaichian, M.M. Najafabadi, M.M. Sheikh-Jabbari, M.M. Sheikh-Jabbari, N. Chair, N. Seiberg, N. Seiberg, O. Bertolami, O. Bertolami, O. Bertolami, O. Bertolami, O.F. Dayi, P. Aschieri, P. Mukherjee, P. Mukherjee, R. Banerjee, R. Banerjee, R. Banerjee, R. Banerjee, R. Banerjee, R.J. Szabo, S. Doplicher, S. Doplicher, S.A. Abel, S.M. Carroll, T. C Cheng, V.P. Nair, V.V. Nesvizhevsky, V.V. Nesvizhevsky, V.V. Nesvizhevsky, X. Calmet, X. Calmet   +53 more
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Broadband Tuning (170nm) of InGaAs Quantum Well Lasers [PDF]

, 1990
The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation.
Eng, L. E., Mehuys, D. G., Mittelstein, M., Yariv, A.   +3 more
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The quantum Gaussian well

, 2010
Different features of a potential in the form of a Gaussian well have been discussed extensively. Although the details of the calculation are involved, the general approach uses a variational method and WKB approximation, techniques which should be ...
Griffiths D. J., Merzbacher E., Saikat Nandi   +2 more
core   +1 more source

Unusual Tunneling Characteristics of Double-quantum-well Heterostructures [PDF]

, 2004
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems.
Lin, Y., Mendez, E. E., Newaz, , Nitta, J., Song, W.   +4 more
core   +3 more sources

Two-dimensional Noncommutative Gravitational Quantum Well

, 2017
In this paper we consider two kinds of noncommutative space-time commutation relations in two-dimensional configuration space and feature the absolute value of the minimal length from the generalized uncertainty relations associated to the particular ...
Avossevou, Gabriel Y, Gouba, Laure, Lawson, Latevi   +2 more
core   +1 more source

Optical Gain Characteristics of BGaAs/GaP Quantum Wells

IEEE Photonics Journal, 2020
Light emitters integrated with Si platform are highly desirable for photonic integrated circuits, however, manufacturing them remains difficult. In this work, BGaAs/GaP quantum well (QW) structures are proposed as a promising solution of the ...
Herbert S. Maczko, Robert Kudrawiec, Marta Gladysiewicz   +2 more
doaj   +1 more source

Distinguishing quantum dot-like localized states from quantum well-like extended states across the exciton emission line in a quantum well

, 2018
We have closely examined the emission spectrum at the heavy-hole exciton resonance in a high-quality GaAs multi-quantum well (MQW) sample using picosecond excitation-correlation photoluminescence (ECPL) spectroscopy.
Bansal, Bhavtosh, Bhuyan, Sumi, Mondal, Richarj, Pal, Bipul   +3 more
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Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires [PDF]

, 1993
Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K.
C. D. W. Wilkinson, C. M. Sotomayor Torres, D. W. Smith, E. H. C. Parker, Kalt H., Morrison I., Presting H., T. E. Whall, Tang Y. S., Tang Y. S., Tang Y. S., Tang Y. S., Tang Y. S., Y. S. Tang, Yescan L.   +14 more
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