Results 71 to 80 of about 255,662 (266)
THE EFFECT OF γ-RADIATION ON THE ELECTRICAL AND OPTICAL CHARACTERISTICS OF InGaN / GaN LEDS
Известия высших учебных заведений. Поволжский регион: Физико-математические науки, 2020 Background. Despite the fact that InGaN / GaN-based structures have firmly conquered the LED market, some issues remain unresolved about how the electrical and optical characteristics of LEDs based on them change under the influence of external ...
L. N. Vostretsova, A. A. Adamovich
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Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
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Cascade Type-I Quantum Well GaSb-Based Diode Lasers
Photonics, 2016 Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm.
Leon Shterengas +5 more
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Advanced Functional Materials, EarlyView.An intrinsic photoactive star‐shaped zinc phtalocyanine‐poly(L‐glutamic acid) (ZnPc‐PGA) nanoplatform for multimodal glioblastoma (GBM) therapy and brain‐targeted elivery. A ZnPc‐PGA‐based multifunctional theranostic nanocarrier platform enables image‐guided, multimodal GBM therapy. ZnPc‐PGA nanocarriers support the integration of fluorescence imaging,
Amina Benaicha‐Fernández +14 more
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Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
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The physics of quantum well structures
Reports on Progress in Physics, 1985 Recently developed methods for growing epitaxial layers of semiconductors have included the ability to exercise independent and spatial control over both the semiconductor band gap and the level of doping. A whole new range of tailored test structures is available for probing physical phenomena on the very short length and time scales appropriate to ...
Kelly, M, Nicholas, R
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Advanced Functional Materials, EarlyView.A bilayer “Anchor‐and‐Seal” passivation strategy using EDAI2 and 4MeO‐PEAI effectively mitigates surface defects in vacuum‐processed perovskite films through synergistic hydrogen bonding and Lewis base coordination. This approach optimizes interfacial energy alignment and suppresses non‐radiative recombination, enabling vacuum‐deposited p‐i‐n ...
Mohammadhossein Kohan +4 more
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Semiconductor Lasers Based on Quantum Well Structures
Communications, 2003 We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As ...
Dusan Pudis +3 more
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Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN
Advanced Functional Materials, EarlyView.Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk +6 more
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NanomaterialsSystems composed of several multi-layer compounds have been extremely useful in tailoring different quantum physical properties of nanomaterials. This is very much true when it comes to semiconductor materials and, in particular, to heterostructures and ...
Josep Batle +4 more
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