Results 191 to 200 of about 26,615 (223)

3D Printing Plasmonic-Enhanced Sulfurized Polyacrylonitrile Cathodes for High-Energy Li-S Microbatteries. [PDF]

Nanomicro Lett
Liu Y, Fu P, Qiu J, Wang Z.
europepmc   +1 more source

Thermo-elastodynamics of nonlinearly viscous solids. [PDF]

Calc Var Partial Differ Equ
Almi S, Badal R, Friedrich M, Schwarzacher S.   +3 more
europepmc   +1 more source

Acoustic multiple transmission peaks in Thue-Morse structures based on lateral resonators. [PDF]

Sci Rep
Zaky ZA, Hennache A, Antraoui I, El Malki M, Khettabi A, Zaky MA.   +5 more
europepmc   +1 more source

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Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary

SIAM Journal on Mathematical Analysis, 2023
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Ming Mei
exaly   +2 more sources

Quasi-neutral limit of the full bipolar Euler-Poisson system

Science China Mathematics, 2010
The authors consider the complete non-isentropic two-fluid Euler-Poisson system consisting of two Euler systems coupled with the Poisson equation. The system describes the behaviour of ions and electrons in plasma. The quasi-neutral limit of this system is studied using asymptotic analysis in multi-dimensional torus.
Yong Li, Song Jiang, Li Hailiang
exaly   +3 more sources

The Mixed Layer Problem and Quasi-Neutral Limit of the Drift-Diffusion Model for Semiconductors

SIAM Journal on Mathematical Analysis, 2012
The mixed layer problem and vanishing Debye length limit (space charge neutral limit) of the bipolar time-dependent drift-diffusion model for semiconductors with p-n junctions are studied in one space dimension. For the general sign-changing doping profile and the general initial data, the quasi-neutral limit is proven rigorously by constructing a more
Shu Wang
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Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile

SIAM Journal on Mathematical Analysis, 2006
In this paper the vanishing Debye length limit (space charge neutral limit) of bipolar time-dependent drift-diffusion models for semiconductors with p-n junctions (i.e., with a fixed bipolar background charge) is studied in one space dimension. For general sign-changing doping profiles, the quasi-neutral limit (zero-Debye-length limit) is justified ...
Shu Wang, Peter A Markowich
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Quasi-neutral limit for the full Euler–Poisson system in one-dimensional space

Nonlinear Analysis: Real World Applications
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Shuzhen Zhang
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A Boundary Layer Problem for an Asymptotic Preserving Scheme in the Quasi-Neutral Limit for the Euler–Poisson System

SIAM Journal on Applied Mathematics, 2010
We consider the two-fluid Euler–Poisson system modeling the expansion of a quasi-neutral plasma in the gap between two electrodes. The plasma is injected from the cathode using boundary conditions which are not at the quasi-neutral equilibrium. This generates a boundary layer at the cathode.
exaly   +3 more sources