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IEEE Transactions on Nuclear Science, 1970
The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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Radiation Hardening in Platinum
physica status solidi (b), 1968AbstractSome measurements of the hardening introduced by fast neutrons in pure platinum are reported. It is found that the change in yield stress of neutron irradiated platinum varies as (Φt)1/2, in agreement with a lattice hardening mechanism. The rate of increase in damage, as observed with field ion microscopy in irradiated platinum, is compared ...
J. M. Galligan, M. J. Attardo
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Radiation-hardened phototransistor
IEEE Transactions on Nuclear Science, 1991A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
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