Results 171 to 180 of about 390,014 (300)

Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate that boron‐vacancy (VB${\rm V}_{\rm B}$) centers in hexagonal boron nitride (hBN) enable quantitative strain sensing with sub‐micrometer resolution. Using this approach under continuously tunable in‐plane stress, we precisely quantify strain‐induced shifts of the E2g${\rm E}_{2{\rm g}}$ Raman mode in multilayer hBN, establishing VB${\rm ...
Zhao Mu   +7 more
wiley   +1 more source

Experimental and Theoretical Study of Defect Evolution in InSb Epilayers under Gamma Irradiation: A Comparative Analysis of MOCVD vs MBE Growth Methods. [PDF]

open access: yesACS Omega
Marroquin JFR   +9 more
europepmc   +1 more source

Fabrication of Pyridinic Nitrogen‐Functionalized Carbon Cloth for High‐Performance Iron‐Chromium Flow Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The carbon cloth electrode with targeted pyridinic nitrogen doping, achieved via urea pyrolysis, effectively modulates the adsorption of Cr(II) species and enhances electron transfer, leading to significantly improved kinetics of the Cr(II)/Cr(III) reaction. The material demonstrates a high discharge capacity of 689.3 mAh and an energy efficiency of 72.
Jinfeng Yi   +9 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

Voltage‐Gated Dedoping of n‐Doped Poly(benzodifurandione) as an Interfacial Protective Mechanism in Electrochromic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electrochromic polymer stability under overpotential is improved by inserting an ultrathin, transparent n‐doped poly(benzodifurandione) interlayer between indium tin oxide and a poly(3,4‐propylenedioxythiophene)‐based electrochromic polymer. The interlayer supports rapid switching at operating bias, then becomes resistive near +0.8 V to suppress excess
Priyanka Rout   +4 more
wiley   +1 more source

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