Results 41 to 50 of about 389,895 (181)

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Journal of Physics D: Applied Physics, 2022
Abstract Realization of radiation-hard electronic devices that are able to work in harsh environments requires deep understanding of the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles.
A I Titov, K V Karabeshkin, A I Struchkov, P A Karaseov, A Azarov   +4 more
openaire   +3 more sources

CHANGES IN THERMALLY STIMULATED CONDUCTIVITY OF CsPbBr3 AND CsPbCl3 CRYSTALS EXPOSED TO X-RAY IRRADIATION

Електроніка та інформаційні технології
Introduction. CsPbBr3 and CsPbCl3 crystals remain among the most intensively studied materials. This is due to their high efficiency in solar cells, which currently exceeds 22%.
Bohdan Pavlyk, Roman Lys, Roman Gamernyk, Mykola Goydalo   +3 more
doaj   +1 more source

Genomic stability in response to high versus low linear energy transfer radiation in Arabidopsis thaliana. [PDF]

, 2014
Low linear energy transfer (LET) gamma rays and high LET HZE (high atomic weight, high energy) particles act as powerful mutagens in both plants and animals.
Britt, Anne B, Conklin, Phillip A, Friesner, Joanna D, Huefner, Neil D, Yoshiyama, Kaoru   +4 more
core   +1 more source

The core structure of presolar graphite onions [PDF]

, 2001
Of the ``presolar particles'' extracted from carbonaceous chondrite dissolution residues, i.e. of those particles which show isotopic evidence of solidification in the neighborhood of other stars prior to the origin of our solar system, one subset has an
Amari S., Bernatowicz T. J., Krueger D., M. Wackenhut, P. Fraundorf, Sorrell W. H., Winters J. M.   +6 more
core   +2 more sources

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaya, A. V. Verem’eva   +3 more
doaj   +1 more source

Quantifying structural damage from self-irradiation in a plutonium superconductor

, 2006
The 18.5 K superconductor PuCoGa5 has many unusual properties, including those due to damage induced by self-irradiation. The superconducting transition temperature decreases sharply with time, suggesting a radiation-induced Frenkel defect concentration ...
A. R. Sweedler, C. H. Booth, C. H. Booth, E. D. Bauer, F. Jutier, J. L. Sarrao, J. N. Mitchell, L. A. Morales, M. Daniel, P. G. Allen, R. E. Wilson, W. G. Wolfer   +11 more
core   +1 more source

Energetics of intrinsic point defects in ZrSiO$_4$ [PDF]

, 2004
Using first principles calculations we have studied the formation energies, electron and hole affinities, and electronic levels of intrinsic point defects in zircon.
D. B. Laks, Emilio Artacho, J. M. Pruneda, K. Robinson, P. Ordejón, S. Ríos   +5 more
core   +1 more source

Determination of the activation energy of A-center in the uniaxially deformed n-Ge single crystals

Ядерна фізика та енергетика, 2017
Based on the decisions of electroneutrality equation and experimental results of measurements of the piezo-Hall-effect the dependences of activation energy of the deep level A-center depending on the uniaxial pressure along the crystallographic ...
S. V. Luniov, A. I. Zimych, P. F. Nazarchuk, S. A. Moroz, L. N. Polishchuk, V. T. Maslyuk, I. G. Megela   +6 more
doaj  

Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

East European Journal of Physics
In this study, the formation and reduction mechanisms of radiation defects resulting from the incorporation of dysprosium (Dy) atoms during the growth process of silicon crystals (FZ) were investigated.
Khodjakbar Daliev, Sharifa B. Utamuradova, Shakhrukh Daliev, Jonibek Khamdamov, Shahriyor B. Norkulov   +4 more
doaj   +1 more source

The influence of a single defect in composite gate insulators on the performance of nanotube transistors

, 2014
The current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode is calculated using the nonequilibrium Greens function method in a tight-binding approximation.
Wang, Neng-Ping, Yu, Wen-Juan
core   +1 more source