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IEEE Transactions on Nuclear Science, 1970
The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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The requirement for radiation hardened registers has been identified for use with existing digital equipment to assure system survivability in nuclear radiation environments. The major problem has been that all semiconductor registers cannot be guaranteed to maintain their information after ionizing radiation transients above 5×109 rads (Si)/sec.
D. Hampel, K. J. Prost
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Radiation Hardening in Platinum
physica status solidi (b), 1968AbstractSome measurements of the hardening introduced by fast neutrons in pure platinum are reported. It is found that the change in yield stress of neutron irradiated platinum varies as (Φt)1/2, in agreement with a lattice hardening mechanism. The rate of increase in damage, as observed with field ion microscopy in irradiated platinum, is compared ...
J. M. Galligan, M. J. Attardo
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Radiation-hardened phototransistor
IEEE Transactions on Nuclear Science, 1991A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
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Radiation hardening in vanadium
Journal of Nuclear Materials, 1970Abstract The effects of neutron irradiation on the tensile properties of 99.9 wt % pure vanadium are investigated in the fluence range 8 × 10 17 to 4 × 10 19 n / cm −2 ( E >1 MeV ). Vanadium is shown to display typical radiation and anneal hardening like other bodycentered cubic (bcc) transition metals.
G.R. Smolik, C.W. Chen
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Radiation-Hardened Microelectronics
AT&T Technical Journal, 1991Many nuclear power, defense, and space applications require radiation-hardened integrated circuits. In 1986, Sandia's expertise in microelectronics radiation hardening was combined with ATT the new process is running at AT&T's Allentown, Pennsylvania, MOS V production facility, and the technology has been transferred to Sandia's Microelectronics ...
James L. Jorgensen, David S. Yaney
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IEEE Transactions on Nuclear Science, 1975
This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g.
K. G. Aubuchon, E. Harari
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This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e. g.
K. G. Aubuchon, E. Harari
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International Journal of Electronics, 2008
Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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Historically, specialized foundry processes have been utilized to produce radiation hardened microelectronics. Radiation hardness by design techniques have been shown to be capable of producing devices of sufficient hardness to resist the deleterious effects of the natural radiation environment of space utilizing standard commercial processes.
J. W. Gambles +2 more
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