Results 261 to 270 of about 1,463,362 (312)

Nonvolatile radiation hardened DICE latch

2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
Spintronic-based integrated circuits have been widely considered as potential candidates for space application, due to the fact that their core devices (e.g. magnetic tunnel junction, MTJ) are intrinsic insensitive to radiation effects. However, their CMOS peripheral circuits are still vulnerable to radiation effects.
Tingting Pang, Wang Kang 0001, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao 0001   +5 more
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On the saturation of radiation hardening

Physics Letters A, 1969
Abstract A model of saturation of radiation hardening is given. This model suggests that saturation of the thermal hardening component should occur at different fluence levels than would the athermal component.
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Transistor sizing for radiation hardening

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004
This paper presents an efficient and accurate numerical analysis technique to simulate single event upsets (SEUs) in logic circuits. Experimental results that show the method is accurate to within 10% of the results obtained using SPICE are provided.
null Quming Zhou, K. Mohanram
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Radiation Hardened by Design Sense Amplifier

2019
This paper presents a fully symmetrical radiation hardened sense amplifier is designed in and 32 nm FinFET Double gate PTM technology to tolerate single node upset and multiple-node upset.circuit. A 9 pC charge is used at critical node of the sense amplifier to analyse Single Event Transient.
Avinash Verma, Gaurav Kaushal
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Radiation Hardening by Process

2017
This chapter describes the approaches for optimization of semiconductor device fabrication processes and structures to mitigate radiation effects in advanced silicon-based technologies, primarily complementary metal oxide semiconductor (CMOS). It discusses effects and mitigation approaches related to insulators, active device regions, and process ...
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Radiation Hardening Applications

1972
Two approaches to the fabrication of radiation-hard dielectrics, utilizing silicon nitride, have been studied; silicon nitride sandwich structure and silicon oxynitride. Radiation-resistant devices investigated to date have included capacitors (MNS and MNOS), MNOS-FETs, bipolar transistors and operational amplifiers.
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Radiation-hardened microelectronics for accelerators

IEEE Transactions on Nuclear Science, 1988
Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized.
J.E. Gover, T.A. Fischer
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Radiation-hardening of semiconductor parts

2002
Abstract ‘Radiation-hardening’ derives from military terminology (see Section 4.1). The term has acquired a wide variety of meanings, depending on the user group and radiation environment concerned. That environment may present a variety of levels of total ionizing dose, transient dose rate, neutrons, or single-event upsets.
Andrew Holmes-Siedle, Len Adams
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Radiation hardening of silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
Abstract The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic ...
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VLSI Processing, Radiation, and Hardening

IEEE Transactions on Nuclear Science, 1978
Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are ...
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