Results 1 to 10 of about 211,225 (152)

Single Event Effect cross section calibration and application to quasi-monoenergetic and spallation facilities [PDF]

EPJ Nuclear Sciences & Technologies, 2018
We describe an approach to calibrate Single Event Effect (SEE)-based detectors in monoenergetic fields and apply the resulting semi-empiric responses to more general mixed-field cases in which a broad variety of particle species and energy spectra are ...
Alía Rubén García, Bonaldo Stefano, Brugger Markus, Danzeca Salvatore, Ferrari Alfredo, Frost Christopher, Infantino Angelo, Iwamoto Yosuke, Mekki Julien, Theis Cris, Thornton Adam   +10 more
doaj   +2 more sources

Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2019
In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles and anode-to-cathode spacing values. We found that doping profiles variation has a stronger impact on SEL sensitivity then variation of spacing.
Paul Leroux, Frédéric Saigne
exaly   +3 more sources

Measurement of single event effect cross section induced by monoenergetic protons on a 130 nm ASIC [PDF]

Journal of Instrumentation, 2022
Abstract Designing integrated circuits in radiation environments such as the High Luminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed to radiation-induced Single Event Effects (SEE). In deep sub-micron technology devices, the impact of SEEs can be mitigated by triple modular redundancy.
Boumediene, D., Jouve, F., Lambert, D., Madar, R., Manen, S., Perrin, O., Royer, L., Soulier, A., Vandaele, R.   +8 more
openaire   +3 more sources

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance [PDF]

IEEE Transactions on Nuclear Science, 2021
Pions make up a large part of the hadronic environment typical of accelerator mixed fields. Characterizing device cross sections against pions is usually disregarded in favor of tests with protons, whose single-event latch-up (SEL) cross section is, nonetheless, experimentally found to be lower than that of pions for all energies below 250 MeV.
Alia Garcia, Ruben, Cerutti, Francesco, Hajdas, Wojtek, Söderström, Daniel, Javanainen, Arto, Saigne, Frederic, Coronetti, Andrea   +7 more
openaire   +2 more sources

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

IEEE Access, 2022
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel.
Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz   +3 more
doaj   +1 more source

Simulation study of beam distribution and secondary neutron for intermediate energy proton single event effect test

He jishu, 2021
BackgroundBased on the 100 MeV proton cyclotron in the China Institute of Atomic Energy (CIAE), the middle-energy proton irradiation test facility was established and several proton single event effect (SEE) experimental study of micro-and nano ...
CHEN Qiming, GUO Gang, HAN Jinhua, ZHANG Fuqiang, ZHANG Yanwen, LIU Jiancheng, ZHAO Shuyong   +6 more
doaj   +1 more source

Populating α-unbound states in 16O via 19F (p, αy)16O reaction [PDF]

EPJ Web of Conferences, 2023
The 12C(α, y)16O reaction is important in the production of universal 16O, but its cross-section at the relevant energies of static helium burning is complex and uncertain.
Távora V.G., Tengblad O., Borge M.J.G., Briz J.A., Fernandez Ruiz D., Jensen E.A.M., Nerio A.N., Perea A.   +7 more
doaj   +1 more source

Active Radiation-Hardening Strategy in Bulk FinFETs

IEEE Access, 2020
In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that ...
Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz   +3 more
doaj   +1 more source

Heavy-Ion Radiation Characteristics of DDR2 Synchronous Dynamic Random Access Memory Fabricated in 56 nm Technology [PDF]

Journal of Astronomy and Space Sciences, 2012
We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission ...
Kwangsun Ryu, Mi-Young Park, Jang-Soo Chae, In Lee, Yukio Uchihori, Hisashi Kitamura, Takeshi Takashima   +6 more
doaj   +1 more source

The dependence of single event upset cross-section on incident angle

Acta Physica Sinica, 2004
Swift heavy ions delivered by Heavy Ion Research Facility at Lanzhou(HIRFL) were used to bombard the 32k SRAM IDT71256 at angles from 0°—85°. The multiple bit upset(MBU) ratio can reach as high as 70% when the device was tested with 15.14MeV/u 136Xe ions or at large angles with 36Ar ions. The angular effect of cross section is mainly due to occurrence
null Zhang Qing-Xiang, null Hou Ming-Dong, null Liu Jie, null Wang Zhi-Guang, null Jin Yun-Fan, null Zhu Zhi-Yong, null Sun You-Mei   +6 more
openaire   +1 more source