Results 1 to 10 of about 1,627 (120)
Bootstrapped Driver and the Single-Event-Upset Effect [PDF]
IEEE Transactions on Circuits and Systems I: Regular Papers, 2020 As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo +3 more
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Applied Sciences, 2022 The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An +6 more
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Single Event Effect Analysis of SiGe Low Noise Amplifier
Electronics, 2021 This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT).
Manel Bouhouche, Saida Latreche
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He jishu, 2021 BackgroundBased on the 100 MeV proton cyclotron in the China Institute of Atomic Energy (CIAE), the middle-energy proton irradiation test facility was established and several proton single event effect (SEE) experimental study of micro-and nano ...
CHEN Qiming +6 more
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Yuanzineng kexue jishu, 2023 There are a lot of particles in space, including protons and heavy ions mainly. These particles in space can induce different radiation effects on the electronic devices, such as single event effect and displacement damage. The single event effect is the
ZHAO Shuyong1,2;GUO Gang1,2,*;SUI Li1,2;ZHANG Zheng1,2;CHEN Qiming1,2;LIU Jiancheng1,2;ZHANG Shufeng1
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Effect of Temperature on Single Event Latchup Sensitivity [PDF]
2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020 Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo +7 more
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Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
Yuanzineng kexue jishu, 2023 The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
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Study on Single Event Effect of SiC JFET Based on Experiment and Simulation
Yuanzineng kexue jishu, 2023 The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly better ...
LI Rongjia1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;XU Mingkang1;MA Lindong2;ZHAO Yuanfu1
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A Soft-Error-Tolerant SAR ADC with Dual-Capacitor Sample-and-Hold Control for Sensor Systems
Sensors, 2021 For a reliable and stable sensor system, it is essential to precisely measure various sensor signals, such as electromagnetic field, pressure, and temperature.
Duckhoon Ro, Minseong Um, Hyung-Min Lee
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