Results 1 to 10 of about 853,970 (265)
Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors [PDF]
Micromachines, 2021 Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong +4 more
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Applied Sciences, 2022 The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An +6 more
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Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data [PDF]
MicromachinesFor single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation ...
Mengtian Bao +3 more
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Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors [PDF]
MicromachinesIn this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth
Mengtian Bao +3 more
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Bootstrapped Driver and the Single-Event-Upset Effect [PDF]
IEEE Transactions on Circuits and Systems I: Regular Papers, 2020 As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo +3 more
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Single Event Effect Analysis of SiGe Low Noise Amplifier
Electronics, 2021 This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT).
Manel Bouhouche, Saida Latreche
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He jishu, 2021 BackgroundBased on the 100 MeV proton cyclotron in the China Institute of Atomic Energy (CIAE), the middle-energy proton irradiation test facility was established and several proton single event effect (SEE) experimental study of micro-and nano ...
CHEN Qiming +6 more
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Yuanzineng kexue jishu, 2023 There are a lot of particles in space, including protons and heavy ions mainly. These particles in space can induce different radiation effects on the electronic devices, such as single event effect and displacement damage. The single event effect is the
ZHAO Shuyong1,2;GUO Gang1,2,*;SUI Li1,2;ZHANG Zheng1,2;CHEN Qiming1,2;LIU Jiancheng1,2;ZHANG Shufeng1
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Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
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Effect of Temperature on Single Event Latchup Sensitivity [PDF]
2020 15th Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2020 Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo +7 more
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