Results 11 to 20 of about 853,970 (265)
Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
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Study on Single Event Effect of SiC JFET Based on Experiment and Simulation
The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly better ...
LI Rongjia1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;XU Mingkang1;MA Lindong2;ZHAO Yuanfu1
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A Soft-Error-Tolerant SAR ADC with Dual-Capacitor Sample-and-Hold Control for Sensor Systems
For a reliable and stable sensor system, it is essential to precisely measure various sensor signals, such as electromagnetic field, pressure, and temperature.
Duckhoon Ro, Minseong Um, Hyung-Min Lee
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Single-Event Effects in CMOS Image Sensors [PDF]
In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian +4 more
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BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
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Metu-Defocusing Beamline : A 15-30 Mev Proton Irradiation Facility and Beam Measurement System [PDF]
Middle East Technical University – Defocusing Beam Line (METU-DBL) project is an irradiation facility providing 15 MeV to 30 MeV kinetic energy protons for testing various high radiation level applications, ranging from Hi-Lumi LHC upgrade, space ...
Bilge Demirkoz M. +15 more
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The methodology for active testing of electronic devices under the radiations [PDF]
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized.
Parlato Aldo +3 more
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A Novel Configurable SOI Technology with Extremely High Radiation Tolerance
Deep space exploration, nuclear industry and high energy physics raise higher requirements for the radiation hardness of integrated circuits. However, the existing radiation hardening technologies, such as radiation hardness by design based on bulk ...
YE Tianchun1,2,*;LI Bo1,2,3;LIU Fanyu1,2,3;LI Duoli1,2,3;LI Binhong1,2,3;CHEN Siyuan1,3
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Lineal Energy of Proton in Silicon by a Microdosimetry Simulation
Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE.
Yueh Chiang +4 more
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Impact of JFET Region Width on Single Event Effects of SiC MOSFETs
The advantages of SiC MOSFETs (metal-oxide semiconductor field effect transistor) make this technology attractive for space, avionics and high-energy accelerator applications.
XU Mingkang1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;LI Rongjia1;ZHAO Yuanfu1,2;WANG Liang2
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