Results 11 to 20 of about 852,793 (216)
Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors [PDF]
Micromachines, 2021 Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong +4 more
doaj +2 more sources
Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data [PDF]
MicromachinesFor single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation ...
Mengtian Bao +3 more
doaj +2 more sources
Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors [PDF]
MicromachinesIn this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth
Mengtian Bao +3 more
doaj +2 more sources
Applied Sciences, 2022 The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An +6 more
doaj +1 more source
Single Event Effect Analysis of SiGe Low Noise Amplifier
Electronics, 2021 This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT).
Manel Bouhouche, Saida Latreche
doaj +1 more source
He jishu, 2021 BackgroundBased on the 100 MeV proton cyclotron in the China Institute of Atomic Energy (CIAE), the middle-energy proton irradiation test facility was established and several proton single event effect (SEE) experimental study of micro-and nano ...
CHEN Qiming +6 more
doaj +1 more source
Yuanzineng kexue jishu, 2023 There are a lot of particles in space, including protons and heavy ions mainly. These particles in space can induce different radiation effects on the electronic devices, such as single event effect and displacement damage. The single event effect is the
ZHAO Shuyong1,2;GUO Gang1,2,*;SUI Li1,2;ZHANG Zheng1,2;CHEN Qiming1,2;LIU Jiancheng1,2;ZHANG Shufeng1
doaj +1 more source
Recent research progress of single particle effect of SiC MOSFET
He jishu, 2022 With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui +6 more
doaj +1 more source
Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
Yuanzineng kexue jishu, 2023 The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
doaj +1 more source
Study on Single Event Effect of SiC JFET Based on Experiment and Simulation
Yuanzineng kexue jishu, 2023 The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly better ...
LI Rongjia1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;XU Mingkang1;MA Lindong2;ZHAO Yuanfu1
doaj +1 more source