Results 31 to 40 of about 17,695,032 (262)

Characterization of single event effect simulation in InP-based High Electron Mobility Transistors

Results in Physics, 2022
The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations.
Shuxiang Sun, Linshuang Liu, Haitao Wu, Ruxian Yao, Hongying Mei, Hua Wen, Yinghui Zhong   +6 more
doaj   +1 more source

Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM

Yuanzineng kexue jishu
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj   +1 more source

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Micromachines, 2021
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie   +4 more
doaj   +1 more source

Early Body Mass Index z‐Score Change and Resolution of Severe Malnutrition in Children With Sickle Cell Anemia in a Low‐Income Setting: A Prospective Single‐Arm Extension Study

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Children with sickle cell anemia (SCA) in low‐income settings are at risk of severe malnutrition, but optimal nutritional management has not been established. We evaluated an intensified ready‐to‐use therapeutic food (RUTF) regimen in children with persistent severe malnutrition after initial treatment and assessed whether early ...
Safiya Gambo, Shehu Umar Abdullahi, Hassan Adam Murtala, Halima Kabir, Khadija A. Shamsu, Sari A. Acra, Virginia A. Stallings, Mark Rodeghier, Michael R. DeBaun, Lauren J. Klein   +9 more
wiley   +1 more source

A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits

Micromachines
With the rapid development of semiconductor technology, the reduction in device operating voltage and threshold voltage has made integrated circuits more susceptible to the effects of particle radiation. Moreover, as process sizes decrease, the impact of
Rui Dong, Hongliang Lu, Caozhen Yang, Yutao Zhang, Ruxue Yao, Yujian Wang, Yuming Zhang   +6 more
doaj   +1 more source

Study of White Neutron Source at CYCIAE-100 for Single Event Effect Irradiation Experiment

Yuanzineng kexue jishu, 2023
Neutron-induced single event effects have potential influence on the reliability of electronic devices in aircraft and ground-based nuclear facilities. The white neutron source, generated by heavy metal target bombardment from proton accelerators, is an ...
CHEN Qiming;BAO Jie;MA Xu;GUO Gang*;ZHAO Shuyong;ZHANG Zheng;HAN Jinhua;ZHANG Fuqiang;LI Wangtian
doaj   +1 more source

Central Nervous System Tumors Among Infants in Canada: A Report From CYP‐C

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Background Central nervous system (CNS) tumors in infants are rare, pose unique clinical challenges, and lack large‐scale evidence‐based data to guide management. This study seeks to describe CNS tumors in Canadian infants and to compare their outcomes with those of older children.
Samuel Sassine, Hallie Coltin, Sylvia Cheng, Lucie Lafay‐Cousin, Vanan Issai Magimairajan, Craig Erker, Stéphanie Vairy, Lynette Bowes, Adam Fleming, Donna Johnston, Sarah McKillop, Roona Sinha, Julie Bennett, Christina Coleman, Laura Wheaton, Shayna Zelcer, Samuele Renzi, Thai Hoa Tran   +17 more
wiley   +1 more source

Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET

IEEE Access
In this work, the single-event burnout (SEB) performance and reasons of the proposed 900V SiC quasi-vertical double diffusion MOSFET with deepened drain (T-QVDMOSFET) are analyzed from the spatial distribution of physical quantities such as power density,
Jin-Ke Shi, Ying Wang, Xin-Xing Fei, Biao Sun, Yan-Xing Song, Yu-Qian Liu, Wei Zhang   +6 more
doaj   +1 more source

Synergistic effect of total ionizing dose and single-event upset in the analog/digital converter AD574

Fushe yanjiu yu fushe gongyi xuebao, 2021
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng, YAO Shuai, YU Xin, LI Xiaolong, LU Wu, WANG Xin, LIU Mohan, SUN Jing, GUO Qi, CAI Jiao, YANG Sheng   +10 more
doaj   +1 more source

Event-related brain potential correlates of human auditory sensory memory-trace formation [PDF]

, 2005
The event-related potential (ERP) component mismatch negativity (MMN) is a neural marker of human echoic memory. MMN is elicited by deviant sounds embedded in a stream of frequent standards, reflecting the deviation from an inferred memory trace of the ...
Baldewig, T., Vernon, D., Dwivedi, P, Baldeweg, Torsten, Gruzelier, JH, Dwivedi, Prabuddh, Dwivedi, P., Gruzelier, J., Vernon, DJ, Haenschel, C., Vernon, David J., Baldeweg, T, Gruzelier, John, Haenschel, C, Haenschel, Corinna   +14 more
core   +1 more source