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Introduction to Single-Event Effects

AbstractRadiation effects in state-of-the-art electronics has become a critical concern that goes beyond the traditional systems operating in harsh environments such as in aviation and space missions. Therefore, there is an increased interest in studying these effects as well as in investigating on how to design reliable and fault-tolerant systems that
Ygor Quadros de Aguiar, Frédéric Wrobel, Jean-Luc Autran, Rubén García Alía   +3 more
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Research on Circuit Level Protection Design of SRAM Single Event Latch-up Effect

Yuanzineng kexue jishu, 2022
SRAM with high density CMOS technology is extremely sensitive to single event latch up, so it is necessary to adopt corresponding protection strategies in space applications.
WU Hao;ZHU Xiang;HAN Jianwei;SHANGGUAN Shipeng;MA Yingqi;LI Yue;ZHAO Xu;YANG Han
doaj  

A Single Event Effect Mitigation Strategy for Nanointegrated Circuit Reinforced Latches

IEEE Access
With the widespread application of nano integrated circuits in high radiation environments such as aerospace and military, single event effects have become the main factor affecting their stability and reliability.
Yizhu Wang
doaj   +1 more source

Research of hardening strategies based on the single event effect induced by atmospheric-like neutrons

Nuclear Engineering and Technology
This paper proposes a robust Error Correcting Code (ECC) hardening strategy to mitigate soft errors for Static Random-Access Memory (SRAM) based Field Programmable Gate Arrays (FPGAs) system in a radiation environment.
Ze-Qi Huang, Han-Tao Jing, Li-Hua Mo, Zhi-Liang Hu, Gao-Peng Shen, Zhi-Hao Zhou, Chang Cai   +6 more
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Experimental Setups for Single Event Effect Studies

Journal of Nuclear Physics, Material Sciences, Radiation and Applications, 2016
Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD Pelletron accelerator were prepared. This accelerator produces proton beams and heavy ion beams up to 107Ag. A Super
MEDINA, NILBERTO H., Vitor Ângelo Paulino de Aguiar, Nemitala Added, Fernando Aguirre, Eduardo L. A. Macchione, S. G. Alberton, Marcilei Aparecida Guazzelli da Silva, BENFICA, J., Fabian Luis Vargas, Bruno Casagrande Porcher   +9 more
openaire   +4 more sources

Experimental Study on Real-time Measurement of Atmospheric-neutron Induced Single Event Effect Based on High-altitude Area

Yuanzineng kexue jishu, 2022
Based on the test site at the Qinghai Tibet Plateau with an altitude of 4 300 m, atmospheric neutron single event effects of a 65 nm high speed large area static random access memory (SRAM) array were measured in real time.
ZHANG Zhangang;LEI Zhifeng;HUANG Yun;EN Yunfei;ZHANG Yi;TONG Teng;LI Xiaohui;SHI Qian;PENG Chao;HE Yujuan;XIAO Qingzhong;LI Jianke;LU Guoguang
doaj  

Predication of Heavy Ion Single Event Upset Threshold and Cross Section Based on Low Energy Proton Test Data in Nanometer Devices

Yuanzineng kexue jishu
In order to ensure the reliability of heavy ion single event effect experimental data and the accuracy of space on-orbit single event error rate prediction, the research was conducted on the method of predicting the equivalent silicon layer thickness ...
LUO Yinhong, ZHANG Fengqi, WANG Tan, DING Lili, JIANG Xinshuai
doaj   +1 more source

Single Event Effect cross section calibration and application to quasi-monoenergetic and spallation facilities

EPJ Nuclear Sciences & Technologies, 2018
We describe an approach to calibrate Single Event Effect (SEE)-based detectors in monoenergetic fields and apply the resulting semi-empiric responses to more general mixed-field cases in which a broad variety of particle species and energy spectra are ...
Alía Rubén García, Bonaldo Stefano, Brugger Markus, Danzeca Salvatore, Ferrari Alfredo, Frost Christopher, Infantino Angelo, Iwamoto Yosuke, Mekki Julien, Theis Cris, Thornton Adam   +10 more
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Prediction of Single Event Effect in Inverter Circuit Based on Deep Learning

IEEE Journal of the Electron Devices Society
Fully Depleted Silicon on Insulator (FDSOI) technology can solve the short channel effect very effectively, with low power consumption, and low voltage, and can improve the subthreshold characteristics of the device.
Jin Huang, Rong Zhao, Shulong Wang, Xingyuan Yan, Hao Zhou, Liutao Li, Shupeng Chen, Hongxia Liu   +7 more
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Characteristics and Mechanisms of Single Event Effects Caused by Atmospheric Neutrons in System in Package Device

Yuanzineng kexue jishu
To investigate the effects of atmospheric neutron radiation effects on a system-in-package (SiP) device, single event upset (SEU) and single event functional interruption (SEFI) were focused on in the experiment.
YE Jiefeng1, 2, LIANG Chaohui2, ZHANG Zhangang2, ZHENG Shunshun1, 2, LEI Zhifeng2, LIU Zhili3, GENG Gaoying3, HAN Hui1
doaj   +1 more source