Results 1 to 10 of about 16,668,686 (260)

A Fast Simulation Method for Evaluating the Single-Event Effect in Aerospace Integrated Circuits [PDF]

Micromachines, 2023
With the continuous progress in integrated circuit technology, single-event effect (SEE) has become a key factor affecting the reliability of aerospace integrated circuits.
Xiaorui Zhang, Yi Liu, Changqing Xu, Xinfang Liao, Dongdong Chen, Yintang Yang   +5 more
doaj   +2 more sources

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors [PDF]

Micromachines, 2021
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie   +4 more
doaj   +2 more sources

Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors [PDF]

Micromachines
In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth
Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li   +3 more
doaj   +2 more sources

Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data [PDF]

Micromachines
For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation ...
Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li   +3 more
doaj   +2 more sources

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Applied Sciences, 2022
The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao   +6 more
doaj   +2 more sources

A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications

Micromachines, 2023
The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE).
Ruxue Yao, Hongliang Lv, Yuming Zhang, Xu Chen, Yutao Zhang, Xingming Liu, Geng Bai   +6 more
doaj   +1 more source

Development and application of a radiation effect evaluation method of aerospace integrated circuits for radiation hardened by design

He jishu, 2023
Aerospace integrated circuits represent core components of space electronic systems, and anti-radiation hardening is a key technology to ensure the reliable operation of aerospace integrated circuits in the space domain.
ZHENG Hongchao, WANG Liang, LI Zhe, GUO Gang, ZHAO Yuanfu   +4 more
doaj   +1 more source

Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions

Yuanzineng kexue jishu, 2023
The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
doaj   +1 more source

Study on Single Event Effect of SiC JFET Based on Experiment and Simulation

Yuanzineng kexue jishu, 2023
The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly better ...
LI Rongjia1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;XU Mingkang1;MA Lindong2;ZHAO Yuanfu1
doaj   +1 more source

Single Event Effect Analysis of SiGe Low Noise Amplifier

Electronics, 2021
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT).
Manel Bouhouche, Saida Latreche
doaj   +1 more source