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The Total Ionizing Dose Effects on Perovskite CsPbBr3 Semiconductor Detector [PDF]

open access: yesSensors, 2023
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects
Wuying Ma   +7 more
doaj   +5 more sources

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET [PDF]

open access: yesMicromachines, 2021
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong   +3 more
doaj   +5 more sources

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit [PDF]

open access: yesMicromachines, 2023
The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao   +5 more
doaj   +4 more sources

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices [PDF]

open access: yesMicromachines, 2023
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried ...
Hao Wu   +9 more
doaj   +2 more sources

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]

open access: yesMicromachines
This paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu   +5 more
doaj   +2 more sources

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]

open access: yesMicromachines, 2023
Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang   +4 more
doaj   +2 more sources

Radiation-Induced Degradation of a Cold-Redundant DC/DC Converter Under Total Ionizing Dose Stress [PDF]

open access: yesMicromachines
This paper investigates the degradation characteristics of a DC/DC converter operating under cold redundancy conditions when subjected to total ionizing dose (TID) effects.
Xiaojin Lu   +6 more
doaj   +2 more sources

Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip [PDF]

open access: yesMicromachines
In this paper, a systematic study on performance degradation of a 0.18 μm BCD-process DCAP (Direct connection to the output CAPacitor) power chip under a total-dose radiation environment is carried out.
Xinfang Liao   +10 more
doaj   +2 more sources

Deep Neural Network-Driven Reliability Assessment Methodology for Total Ionizing Dose Effects in FDSOI MOSFETs [PDF]

open access: yesMicromachines
This work investigates the effects of total ionizing dose (TID) on 22 nm FDSOI MOSFET devices through combined technology computer-aided design (TCAD) simulations and actual TID irradiation experiments, establishing a comprehensive dataset of radiation ...
Hanying Deng   +6 more
doaj   +2 more sources

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices [PDF]

open access: yesMicromachines
The working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in ...
Hao Yu   +5 more
doaj   +2 more sources

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