Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET [PDF]
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong +3 more
doaj +7 more sources
Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit
The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao +5 more
doaj +5 more sources
Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]
Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang +4 more
doaj +4 more sources
Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]
This paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu +5 more
doaj +2 more sources
Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip [PDF]
In this paper, a systematic study on performance degradation of a 0.18 μm BCD-process DCAP (Direct connection to the output CAPacitor) power chip under a total-dose radiation environment is carried out.
Xinfang Liao +10 more
doaj +2 more sources
Total ionizing dose effects in MOS oxides and devices [PDF]
This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
T R Oldham
exaly +2 more sources
Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried ...
Hao Wu +9 more
doaj +3 more sources
Effects of Low Dose Gamma Radiation on Plasma Proteins in Chickens Hatched from Eggs Irradiated before Incubation [PDF]
Introduction: Biological effects after a single prenatal exposure to ionizing radiation, reflecting significant heterogeneities in the responses in different species with respect to radiation type, dose, dose rate and time of exposure.
Jadranka Pejaković Hlede +5 more
doaj +1 more source
The Total Ionizing Dose Effects on Perovskite Cspbbr3 Semiconductor Detector
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a long-term radiation environment.
Wuying Ma +7 more
openaire +3 more sources
Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias
BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the ...
QIU Yiwu +4 more
doaj +1 more source

