Results 31 to 40 of about 39,184 (214)

The methodology for active testing of electronic devices under the radiations [PDF]

open access: yesNuclear Technology and Radiation Protection, 2018
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized.
Parlato Aldo   +3 more
doaj   +1 more source

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

open access: yesNanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen   +8 more
doaj   +1 more source

Investigation of Total Ionizing Dose Effects and Behavioral-level Simulation of CMOS Transceivers

open access: yesYuanzineng kexue jishu
The complexity of radiation effects in system-level circuits imposes dual requirements on modeling approaches—high accuracy and high computational efficiency.
BAI Haojie, PENG Zhigang, LI Yang, LI Yonghong, HE Chaohui
doaj   +1 more source

Total Ionizing Dose Effects Investigation on the Performance of MEMS Microphone Irradiated by γ-Ray

open access: yesApplied System Innovation
Data collected by sensors plays a critical role in system decision-making. Microphone arrays enable distance measurement and fault localization, which is particularly critical in the radiation environments of nuclear facilities.
Panfeng Zhang   +7 more
doaj   +1 more source

Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

open access: yesFrontiers in Materials, 2022
The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy γ-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of VoγH2)
Guangbao Lu   +7 more
doaj   +1 more source

The Role of Hematopoietic Cell Transplantation in Ataxia‐Telangiectasia

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Background Ataxia‐telangiectasia (A‐T) is a DNA repair disorder characterized by neurodegeneration, immunodeficiency, and cancer predisposition. Hematopoietic cell transplantation (HCT) is an established therapy in related disorders such as Fanconi anemia (FA) and Nijmegen breakage syndrome (NBS), but its role in A‐T is unclear.
Laila Alkhouli   +3 more
wiley   +1 more source

Total Ionizing Dose and Single-Event Effect Response of the AD524CDZ Instrumentation Amplifier

open access: yesEnergies
This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose 60Co irradiation.
Jaime Cardenas Chavez   +5 more
doaj   +1 more source

A study on the influence of dose rate on total ionizing dose effect of anti-fuse field programmable gate array—The irradiation damage is attenuated at low dose rate

open access: yesFrontiers in Physics, 2022
The TID (total ionizing dose) in-situ experiments of LC1020B, an anti-fuse FPGA (Field Programmable Gate Array) device, were designed and carried out under different dose rates, and the influence of dose rate on the TID effect of FPGA was studied.
Minqiang Liu   +3 more
doaj   +1 more source

Tau acetylation at K331 has limited impact on tau pathology in vivo

open access: yesFEBS Letters, EarlyView.
We mapped tau post‐translational modifications in humanized MAPT knock‐in mice and in amyloid‐bearing double knock‐in mice. Acetylation within the repeat domain, particularly around K331, showed modest increases under amyloid pathology. To test functional relevance, we generated MAPTK331Q knock‐in mice.
Shoko Hashimoto   +3 more
wiley   +1 more source

Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device

open access: yesYuanzineng kexue jishu
Bipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
doaj   +1 more source

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