Results 31 to 40 of about 16,582,220 (297)

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes [PDF]

, 2011
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications.
V. Goiffon, Place, Sébastien, Goiffon, Vincent, J.-P. Carrere, P. Magnan, Roy, François, S. Place, Carrere, Jean-Pierre, Magnan, Pierre, F. Roy   +9 more
core   +1 more source

Investigation of Total Ionizing Dose Eects on Semiconductor Power Devices under Static and Dynamic Conditions. Studio degli Effetti della Dose Totale delle Radiazioni Ionizzanti sui Dispositivi di Potenza a Semiconduttore in Condizioni Statiche e Dinamiche [PDF]

, 2022
The present thesis is aimed to show the results achieved during a five months internship period at the European Space Agency-European Space Research and Technology Centre (ESA-ESTEC).
Valente, Eugenio
core  

Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices

Micromachines, 2022
The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated.
Jianye Yang, Hongxia Liu, Kun Yang
doaj   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Combined effect of total ionizing dose and electromagnetic pulse on bipolar junction transistor [PDF]

AIP Advances
Electronic systems in complex radiation environments, such as space applications and nuclear power plants, face simultaneous threats from the cumulative damage of Total Ionizing Dose (TID) and the transient disturbances of Electromagnetic Pulse (EMP ...
Meiqing Zhong, Cui Meng, Yinong Liu, Chicheng Liu, Lanfeng Yuan, Xinfei Liu, Lin Wen, Qi Guo, Rui Ding, Weiheng Shao   +9 more
doaj   +1 more source

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials, 2020
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 ...
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim   +12 more
doaj   +1 more source

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]

, 2008
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
Olivier Saint-Pé, Goiffon, Vincent, Nicolas Huger, Frédéric Bernard, Guy Rolland, Bernard, Frédéric, Pierre Magnan, Huger, Nicolas, Corbière, Franck, Rolland, Guy, Saint-Pé, Olivier, Vincent Goiffon, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

The methodology for active testing of electronic devices under the radiations [PDF]

Nuclear Technology and Radiation Protection, 2018
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized.
Parlato Aldo, Tomarchio Elio A., Calligaro Cristiano, Pace Calogero   +3 more
doaj   +1 more source

Investigation of Total Ionizing Dose Effects and Behavioral-level Simulation of CMOS Transceivers

Yuanzineng kexue jishu
The complexity of radiation effects in system-level circuits imposes dual requirements on modeling approaches—high accuracy and high computational efficiency.
BAI Haojie, PENG Zhigang, LI Yang, LI Yonghong, HE Chaohui
doaj   +1 more source

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source