Results 11 to 20 of about 39,184 (214)

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET [PDF]

open access: yesMicromachines, 2021
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong   +3 more
doaj   +2 more sources

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]

open access: yesMicromachines, 2023
Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang   +4 more
doaj   +2 more sources

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]

open access: yesMicromachines
This paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu   +5 more
doaj   +2 more sources

Total Ionizing Dose Effect Simulation Modeling and Analysis for a DCAP Power Chip [PDF]

open access: yesMicromachines
In this paper, a systematic study on performance degradation of a 0.18 μm BCD-process DCAP (Direct connection to the output CAPacitor) power chip under a total-dose radiation environment is carried out.
Xinfang Liao   +10 more
doaj   +2 more sources

Effects of Low Dose Gamma Radiation on Plasma Proteins in Chickens Hatched from Eggs Irradiated before Incubation [PDF]

open access: yesIranian Journal of Medical Physics, 2023
Introduction: Biological effects after a single prenatal exposure to ionizing radiation, reflecting significant heterogeneities in the responses in different species with respect to radiation type, dose, dose rate and time of exposure.
Jadranka Pejaković Hlede   +5 more
doaj   +1 more source

Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit

open access: yesMicromachines, 2023
The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao   +5 more
doaj   +1 more source

Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias

open access: yesHe jishu, 2023
BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the ...
QIU Yiwu   +4 more
doaj   +1 more source

Synergistic effect of total ionizing dose and single-event upset in the analog/digital converter AD574

open access: yesFushe yanjiu yu fushe gongyi xuebao, 2021
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng   +10 more
doaj   +1 more source

Development of extendable on-line test system for total ionizing dose effect of microprocessor

open access: yesHe jishu, 2022
BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo   +4 more
doaj   +1 more source

Radiation effect sensitive peripheral of 180 nm CMOS microprocessor and probabilistic model analysis of its damage dose

open access: yesHe jishu, 2021
BackgroundThe rapid development of nuclear emergency robots requires more understanding of online radiation damage in commercial microprocessors in robots.PurposeThis study aims to find the most sensitive peripheral of complementary metal oxide ...
LIU Yining   +5 more
doaj   +1 more source

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