Results 11 to 20 of about 16,582,220 (297)

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

open access: yes2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018
This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and ...
Slimani, Mariem   +2 more
openaire   +3 more sources

Total ionizing dose effects in bipolar and BiCMOS devices [PDF]

open access: yesIEEE Radiation Effects Data Workshop, 2005., 2005
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Chavez, Rosa M.   +3 more
openaire   +4 more sources

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

open access: yesMicromachines, 2023
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried ...
Hao Wu   +9 more
doaj   +3 more sources

Total Ionizing Dose Effects on Current Sense Amplifiers

open access: yes2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2021
This paper presents the latest test results of two current sense amplifiers under gamma-ray irradiation to characterize the behavior for total ionizing dose (TID) effects.
Aksteiner, Niklas, Budroweit, Jan
openaire   +3 more sources

The Analysis on Space Radiation Environment and Effect of the KOMPSAT-2 Spacecraft(I): Total Ionizing Dose Effect [PDF]

open access: yesJournal of Astronomy and Space Sciences, 2001
In this paper, space radiation environment and total ionizing dose(TID) effect have been analyzed for the KOMPSAT-2 operational orbit. It has been revealed that the trapped protons are concentrated in the SAA(South Atlantic Anomaly) area and that the ...
Myung-Jin Baek, Hak-Jung Kim
doaj   +1 more source

Investigations on MGy Total Ionizing Dose Effects in CMOSTechnologies

open access: yes, 2015
This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics.
Gaillardin, M.   +8 more
core   +4 more sources

The Total Ionizing Dose Effects on Perovskite Cspbbr3 Semiconductor Detector

open access: yesSSRN Electronic Journal, 2022
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr3 must be considered when working in a long-term radiation environment.
Wuying Ma   +7 more
openaire   +4 more sources

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

open access: yesIEEE Access, 2022
This work investigates the cumulative dose 60Co gamma ( $\gamma$ ) – ray irradiation effects on enhancement mode HEMT devices inheriting 3D – Electron and Hole Gases for dosimeter applications.
Khushwant Sehra   +6 more
doaj   +1 more source

Impact of different parameters on the static random access memory under the total ionizing dose

open access: yesFushe yanjiu yu fushe gongyi xuebao, 2023
The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang   +9 more
doaj   +1 more source

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]

open access: yes, 2011
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent   +14 more
core   +1 more source

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