Results 11 to 20 of about 39,310 (257)
Fushe yanjiu yu fushe gongyi xuebao, 2021 This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng +10 more
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Development of extendable on-line test system for total ionizing dose effect of microprocessor
He jishu, 2022 BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo +4 more
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He jishu, 2021 BackgroundThe rapid development of nuclear emergency robots requires more understanding of online radiation damage in commercial microprocessors in robots.PurposeThis study aims to find the most sensitive peripheral of complementary metal oxide ...
LIU Yining +5 more
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Interplay Between
IEEE Access, 2022 This work investigates the cumulative dose 60Co gamma ( $\gamma$ ) – ray irradiation effects on enhancement mode HEMT devices inheriting 3D – Electron and Hole Gases for dosimeter applications.
Khushwant Sehra +6 more
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Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
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Total ionizing dose effects in bipolar and BiCMOS devices [PDF]
IEEE Radiation Effects Data Workshop, 2005., 2005 This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Chavez, Rosa M. +3 more
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Evaluation of Total Ionizing Dose Effects on Commercial FRAMs
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018 This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and ...
Slimani, Mariem +2 more
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Nuclear Engineering and Technology, 2023 We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2.
Hani Baek +3 more
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IEEE Access, 2021 The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated.
Chao Peng +6 more
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A Novel Configurable SOI Technology with Extremely High Radiation Tolerance
Yuanzineng kexue jishu, 2023 Deep space exploration, nuclear industry and high energy physics raise higher requirements for the radiation hardness of integrated circuits. However, the existing radiation hardening technologies, such as radiation hardness by design based on bulk ...
YE Tianchun1,2,*;LI Bo1,2,3;LIU Fanyu1,2,3;LI Duoli1,2,3;LI Binhong1,2,3;CHEN Siyuan1,3
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