Nuclear Engineering and Technology, 2023 We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2.
Hani Baek +3 more
doaj +1 more source
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent +20 more
core +1 more source
Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs
IEEE Transactions on Nuclear Science, 2023 Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage
Stefano Bonaldo +6 more
openaire +1 more source
Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]
, 2010 This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent +13 more
core +1 more source
IEEE Access, 2021 The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated.
Chao Peng +6 more
doaj +1 more source
A Novel Configurable SOI Technology with Extremely High Radiation Tolerance
Yuanzineng kexue jishu, 2023 Deep space exploration, nuclear industry and high energy physics raise higher requirements for the radiation hardness of integrated circuits. However, the existing radiation hardening technologies, such as radiation hardness by design based on bulk ...
YE Tianchun1,2,*;LI Bo1,2,3;LIU Fanyu1,2,3;LI Duoli1,2,3;LI Binhong1,2,3;CHEN Siyuan1,3
doaj +1 more source
In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]
, 2012 This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent +2 more
core +1 more source
Ionizing and non-ionizing radiation and the risk of childhood cancer-illustrated with domestic radon and radio frequency electromagnetic field exposure [PDF]
, 2013 Background Children are exposed to many different environmental factors, including exposure to low-dose ionizing radiation and to non-ionizing radiation.
Hauri, Dimitri
core +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +5 more
core +1 more source
He jishu, 2022 BackgroundTotal dose effect of silicon-on-insulator (SOI) devices can be reinforced through the back gate port, hence the device parameter degradation caused by irradiation can be compensated by applying back-gate bias voltage using the positive back ...
WANG Haiyang +4 more
doaj +1 more source