Results 21 to 30 of about 39,184 (214)

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

IEEE Access, 2022
This work investigates the cumulative dose 60Co gamma ( $\gamma$ ) – ray irradiation effects on enhancement mode HEMT devices inheriting 3D – Electron and Hole Gases for dosimeter applications.
Khushwant Sehra, Vandana Kumari, Poonam Kasturi, Mridula Gupta, Meena Mishra, Dipendra Singh Rawal, Manoj Saxena   +6 more
doaj   +1 more source

Impact of different parameters on the static random access memory under the total ionizing dose

Fushe yanjiu yu fushe gongyi xuebao, 2023
The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang, CHEN Qiming, GONG Yihao, XIAO Shuyan, ZHANG Zheng, MA Xu, ZHAO Shuyong, ZHENG Hongchao, ZHANG Jianpeng, GUO Gang   +9 more
doaj   +1 more source

Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

Nuclear Engineering and Technology, 2023
We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2.
Hani Baek, Byung Gun Park, Chaeho Shin, Gwang Min Sun   +3 more
doaj   +1 more source

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

IEEE Access, 2021
The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated.
Chao Peng, Rui Gao, Zhifeng Lei, Zhangang Zhang, Yiqiang Chen, Yun-Fei En, Yun Huang   +6 more
doaj   +1 more source

A Novel Configurable SOI Technology with Extremely High Radiation Tolerance

Yuanzineng kexue jishu, 2023
Deep space exploration, nuclear industry and high energy physics raise higher requirements for the radiation hardness of integrated circuits. However, the existing radiation hardening technologies, such as radiation hardness by design based on bulk ...
YE Tianchun1,2,*;LI Bo1,2,3;LIU Fanyu1,2,3;LI Duoli1,2,3;LI Binhong1,2,3;CHEN Siyuan1,3
doaj   +1 more source

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Micromachines, 2023
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried ...
Hao Wu, Xiaojun Fu, Jun Luo, Manlin Yang, Xiaoyu Yang, Wei Huang, Huan Zhang, Fan Xiang, Yang Pu, Ziwei Wang   +9 more
doaj   +1 more source

Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias

He jishu, 2022
BackgroundTotal dose effect of silicon-on-insulator (SOI) devices can be reinforced through the back gate port, hence the device parameter degradation caused by irradiation can be compensated by applying back-gate bias voltage using the positive back ...
WANG Haiyang, ZHENG Qiwen, CUI Jiangwei, LI Yudong, GUO Qi   +4 more
doaj   +1 more source

Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices

Micromachines, 2022
The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated.
Jianye Yang, Hongxia Liu, Kun Yang
doaj   +1 more source

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials, 2020
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 ...
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim   +12 more
doaj   +1 more source

Combined effect of total ionizing dose and electromagnetic pulse on bipolar junction transistor [PDF]

AIP Advances
Electronic systems in complex radiation environments, such as space applications and nuclear power plants, face simultaneous threats from the cumulative damage of Total Ionizing Dose (TID) and the transient disturbances of Electromagnetic Pulse (EMP ...
Meiqing Zhong, Cui Meng, Yinong Liu, Chicheng Liu, Lanfeng Yuan, Xinfei Liu, Lin Wen, Qi Guo, Rui Ding, Weiheng Shao   +9 more
doaj   +1 more source