Results 21 to 30 of about 39,310 (257)

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

IEEE Transactions on Nuclear Science, 2023
Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage
Stefano Bonaldo, En Xia Zhang, Serena Mattiazzo, Alessandro Paccagnella, Simone Gerardin, Ronald D. Schrimpf, Daniel M. Fleetwood   +6 more
openaire   +1 more source

Damage law and mechanism of total dose of PDSOI transistors with different channel lengths caused by backgate bias

He jishu, 2022
BackgroundTotal dose effect of silicon-on-insulator (SOI) devices can be reinforced through the back gate port, hence the device parameter degradation caused by irradiation can be compensated by applying back-gate bias voltage using the positive back ...
WANG Haiyang, ZHENG Qiwen, CUI Jiangwei, LI Yudong, GUO Qi   +4 more
doaj   +1 more source

Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices

Micromachines, 2022
The combined effect of total ionization dose (TID) and time-dependent dielectric breakdown (TDDB) of partially depleted silicon-on-insulator (PDSOI) NMOSFET is investigated.
Jianye Yang, Hongxia Liu, Kun Yang
doaj   +1 more source

Combined effect of total ionizing dose and electromagnetic pulse on bipolar junction transistor [PDF]

AIP Advances
Electronic systems in complex radiation environments, such as space applications and nuclear power plants, face simultaneous threats from the cumulative damage of Total Ionizing Dose (TID) and the transient disturbances of Electromagnetic Pulse (EMP ...
Meiqing Zhong, Cui Meng, Yinong Liu, Chicheng Liu, Lanfeng Yuan, Xinfei Liu, Lin Wen, Qi Guo, Rui Ding, Weiheng Shao   +9 more
doaj   +1 more source

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials, 2020
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 ...
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim   +12 more
doaj   +1 more source

The methodology for active testing of electronic devices under the radiations [PDF]

Nuclear Technology and Radiation Protection, 2018
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized.
Parlato Aldo, Tomarchio Elio A., Calligaro Cristiano, Pace Calogero   +3 more
doaj   +1 more source

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source

Investigation of Total Ionizing Dose Effects and Behavioral-level Simulation of CMOS Transceivers

Yuanzineng kexue jishu
The complexity of radiation effects in system-level circuits imposes dual requirements on modeling approaches—high accuracy and high computational efficiency.
BAI Haojie, PENG Zhigang, LI Yang, LI Yonghong, HE Chaohui
doaj   +1 more source

Total Ionizing Dose Effects Investigation on the Performance of MEMS Microphone Irradiated by γ-Ray

Applied System Innovation
Data collected by sensors plays a critical role in system decision-making. Microphone arrays enable distance measurement and fault localization, which is particularly critical in the radiation environments of nuclear facilities.
Panfeng Zhang, Xuecheng Du, Chao Ma, Yiran Wu, Zhenya Li, Hao Yun, Jiajun Wei, Zhirui Zheng   +7 more
doaj   +1 more source

Total Ionizing Dose and Single-Event Effect Response of the AD524CDZ Instrumentation Amplifier

Energies
This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose 60Co irradiation.
Jaime Cardenas Chavez, Dave Hiemstra, Adriana Noguera Cundar, Brayden Johnson, David Baik, Li Chen   +5 more
doaj   +1 more source