Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor [PDF]
IEEE Access, 2020 Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools,
Gangping Yan +6 more
doaj +5 more sources
Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit [PDF]
Micromachines, 2023 The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao +5 more
doaj +2 more sources
Investigation of TID-induced capacitance variation in GaAs edge-lift capacitors and its effect on RF impedance matching [PDF]
Scientific ReportsThis paper investigates the total ionizing dose response of passive components fabricated in a commercial GaAs process, with a focus on dose-dependent capacitance variation in fringe-field–dominant structures.
Min-Su Kim +3 more
doaj +2 more sources
Charge Trapping Effects on n−MOSFET Current Mirrors Under TID Radiation [PDF]
MicromachinesThis study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the ...
Dorsaf Aguir +3 more
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Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]
MicromachinesThis paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu +5 more
doaj +2 more sources
Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel [PDF]
SensorsA 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS
Pedro Santos +3 more
doaj +2 more sources
Radiation-Induced Degradation of a Cold-Redundant DC/DC Converter Under Total Ionizing Dose Stress [PDF]
MicromachinesThis paper investigates the degradation characteristics of a DC/DC converter operating under cold redundancy conditions when subjected to total ionizing dose (TID) effects.
Xiaojin Lu +6 more
doaj +2 more sources
Deep Neural Network-Driven Reliability Assessment Methodology for Total Ionizing Dose Effects in FDSOI MOSFETs [PDF]
MicromachinesThis work investigates the effects of total ionizing dose (TID) on 22 nm FDSOI MOSFET devices through combined technology computer-aided design (TCAD) simulations and actual TID irradiation experiments, establishing a comprehensive dataset of radiation ...
Hanying Deng +6 more
doaj +2 more sources
Radiation-Tolerant PbS CQD Thin-Film Photodiode-Based SWIR Image Sensors [PDF]
SensorsShort-wavelength infrared (SWIR) image sensors are of increasing interest for space applications, where ionizing radiation can significantly impact device performance.
Minhyun Jin +6 more
doaj +2 more sources
Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]
Micromachines, 2023 Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang +4 more
doaj +2 more sources