Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor [PDF]
IEEE Access, 2020 Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools,
Gangping Yan +6 more
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Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit [PDF]
Micromachines, 2023 The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao +5 more
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Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
Micromachines, 2021 Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong +3 more
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Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
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Frontiers in Physics, 2022 The TID (total ionizing dose) in-situ experiments of LC1020B, an anti-fuse FPGA (Field Programmable Gate Array) device, were designed and carried out under different dose rates, and the influence of dose rate on the TID effect of FPGA was studied.
Minqiang Liu +3 more
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Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs
AIP Advances, 2022 Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li +8 more
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Design, implementation and test of a space qualified dosimeter for total ionizing dose measurement [PDF]
مجله علوم و فنون هستهای, 2022 The space environment can cause severe problems for electronic circuits. The plasma, radiation, debris, and no thermal convection are some space environment-specific conditions.
R. Amjadifard +2 more
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Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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System-level testing and qualification of environmental sensors for nuclear decommissioning [PDF]
EPJ Web of Conferences, 2023 In this work, we show the first steps of a systemlevel qualification methodology for a series of Commercial off-the Shelf (COTS) environment sensors subjected to Total Ionizing Dose (TID).
Urena-Acuna A. +7 more
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Fushe yanjiu yu fushe gongyi xuebao, 2021 This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng +10 more
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