Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit [PDF]
Micromachines, 2023 The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices.
Tianzhi Gao +5 more
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Investigation of TID-induced capacitance variation in GaAs edge-lift capacitors and its effect on RF impedance matching [PDF]
Scientific ReportsThis paper investigates the total ionizing dose response of passive components fabricated in a commercial GaAs process, with a focus on dose-dependent capacitance variation in fringe-field–dominant structures.
Min-Su Kim +3 more
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Charge Trapping Effects on n−MOSFET Current Mirrors Under TID Radiation [PDF]
MicromachinesThis study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the ...
Dorsaf Aguir +3 more
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Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]
MicromachinesThis paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu +5 more
doaj +2 more sources
Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel [PDF]
SensorsA 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS
Pedro Santos +3 more
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Radiation-Induced Degradation of a Cold-Redundant DC/DC Converter Under Total Ionizing Dose Stress [PDF]
MicromachinesThis paper investigates the degradation characteristics of a DC/DC converter operating under cold redundancy conditions when subjected to total ionizing dose (TID) effects.
Xiaojin Lu +6 more
doaj +2 more sources
Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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Radiation-Hardened Perovskite Solar Cells Enabled by Redox-Active V<sub>2</sub>O <i><sub>x</sub></i> Hole Transport Layer for Space Applications. [PDF]
Small SciA redox‐active V2Ox/self‐assembled layer bilayer hole transport layer improves the proton radiation resilience of perovskite solar cells for space applications. The V2Ox interface suppresses irradiation‐induced metallic Pb formation while buffering interfacial degradation, highlighting metal oxide interfacial engineering as a practical route toward ...
Han EQ +7 more
europepmc +2 more sources
Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]
Micromachines, 2023 Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang +4 more
doaj +2 more sources
Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices [PDF]
MicromachinesThe working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in ...
Hao Yu +5 more
doaj +2 more sources