Results 21 to 30 of about 8,141,274 (193)

System-level testing and qualification of environmental sensors for nuclear decommissioning [PDF]

EPJ Web of Conferences, 2023
In this work, we show the first steps of a systemlevel qualification methodology for a series of Commercial off-the Shelf (COTS) environment sensors subjected to Total Ionizing Dose (TID).
Urena-Acuna A., Favrichon J., Cantrel E., Robin P.A., Balier A., Maraine T., Saigné F., Boch J.   +7 more
doaj   +1 more source

Synergistic effect of total ionizing dose and single-event upset in the analog/digital converter AD574

Fushe yanjiu yu fushe gongyi xuebao, 2021
This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng, YAO Shuai, YU Xin, LI Xiaolong, LU Wu, WANG Xin, LIU Mohan, SUN Jing, GUO Qi, CAI Jiao, YANG Sheng   +10 more
doaj   +1 more source

Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

Frontiers in Materials, 2022
The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy γ-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of VoγH2)
Guangbao Lu, Guangbao Lu, Jun Liu, Jun Liu, Qirong Zheng, Qirong Zheng, Yonggang Li, Yonggang Li   +7 more
doaj   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent, Molina, Romain, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Corbiere, F., Marcelot, Olivier, Magnan, P., Gaillardin, M., Corbière, Franck, Molina, R., Martin-Gonthier, P., Paillet, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Goiffon, V., Marcandella, Claude, Magnan, Pierre, Martin-Gonthier, Philippe   +20 more
core   +1 more source

Investigation of Total Ionizing Dose Eects on Semiconductor Power Devices under Static and Dynamic Conditions. Studio degli Effetti della Dose Totale delle Radiazioni Ionizzanti sui Dispositivi di Potenza a Semiconduttore in Condizioni Statiche e Dinamiche [PDF]

, 2022
The present thesis is aimed to show the results achieved during a five months internship period at the European Space Agency-European Space Research and Technology Centre (ESA-ESTEC).
Valente, Eugenio
core  

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]

, 2011
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent, Philippe Paillet, Gaillardin, Marc, Sylvain Girard, Girard, Sylvain, Pierre Magnan, Marc Gaillardin, Martinez, Martial, Gaillardin, M., Paillet, P., Martial Martinez, Paillet, Philippe, Vincent Goiffon, Magnan, Pierre, Martinez, M.   +14 more
core   +1 more source

In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]

, 2012
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent, Magnan, Pierre, Martin-Gonthier, Philippe   +2 more
core   +1 more source

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent, Magali Estribeau, Estribeau, Magali, Virmontois, Cédric, Pinel, Philippe, Philippe Pinel, Pierre Magnan, Corbière, Franck, Cédric Virmontois, Vincent Goiffon, Cervantes, Paola, Paola Cervantes, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Development of extendable on-line test system for total ionizing dose effect of microprocessor

He jishu, 2022
BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo, YU Weiyue, LIANG Runcheng, ZHENG Zhirui, GUO Rong   +4 more
doaj   +1 more source

Total Ionizing Dose Effects on Current Sense Amplifiers

, 2022
This paper presents the latest test results of two current sense amplifiers under gamma-ray irradiation to characterize the behavior for total ionizing dose (TID) effects.
Aksteiner, Niklas, Budroweit, Jan
core   +1 more source