Results 21 to 30 of about 554 (150)

Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

Frontiers in Materials, 2022
The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy γ-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of VoγH2)
Guangbao Lu, Guangbao Lu, Jun Liu, Jun Liu, Qirong Zheng, Qirong Zheng, Yonggang Li, Yonggang Li   +7 more
doaj   +1 more source

Development of extendable on-line test system for total ionizing dose effect of microprocessor

He jishu, 2022
BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo, YU Weiyue, LIANG Runcheng, ZHENG Zhirui, GUO Rong   +4 more
doaj   +1 more source

COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaN-based transistor 10 KeV X-ray Analysis

Journal of Physics: Conference Series, 2022
Abstract Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters.
Bôas, Alexis C.Vilas, Alberton, Saulo G.P.N., de Melo, Marco Antônio Assis, Santos, Roberto Baginski Batista, Giacomini, R. Camargo, Medina, Nilberto H., Seixas, Luís Eduardo, Finco, S., Palomo Pinto, Rogelio, Guazzelli, Marcilei Aparecida   +9 more
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Evaluation of high performance converters under low dose rate total ionizing dose (TID) testing for NASA programs [PDF]

1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002
This paper reports the results of low dose rate (0.02-0.04 Rads(Si)/sec) TID tests performed on several types of high performance analog-to-digital and digital-to-analog converters (ADCs/DACs). The test results showed that BiCMOS parts were very susceptible to radiation damage at very low levels [2-5 kRads(Si)] and the bipolar parts showed higher ...
A.K. Sharma, K. Sahu, S. Kniffin
openaire   +1 more source

Investigating radiation effects on LSF0102 level shifters [PDF]

EPJ Web of Conferences
We present the results of a Total Ionizing Dose (TID) test on Texas Instruments LSF0102 level shifters irradiated with 60Co gamma rays up to a total dose of 20 kGy.
Casolaro Pierluigi, Izzo Vincenzo, Vari Riccardo, Principe Claudio, Vanzanella Antonio, Di Meo Paolo, Anastasio Antonio, Imtiaz Arbab, Aloisio Alberto   +8 more
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Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Micromachines, 2021
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong, Hongxia Liu, Shulong Wang, Xiaocong Wu   +3 more
doaj   +1 more source

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

AIP Advances, 2015
The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented.
Zujun Wang, Wei Chen, Jiangkun Sheng, Yan Liu, Zhigang Xiao, Shaoyan Huang, Minbo Liu   +6 more
doaj   +1 more source

Radiation hardness study of positive LDO voltage regulators [PDF]

EPJ Web of Conferences
Two linear voltage regulators LS2-5V and LM2931 (output voltage of 5.0 V) were studied experimentally on their hardness to the radiation total ionizing dose (TID) effects.
Rybalka Sergey, Kulchenkov Evgeny, Demidov Andrey   +2 more
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Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source

Using machine learning for anomaly detection on a system-on-chip under gamma radiation

Nuclear Engineering and Technology, 2022
The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) can cause permanent damages on such nanoscale ...
Eduardo Weber Wächter, Server Kasap, Şefki Kolozali, Xiaojun Zhai, Shoaib Ehsan, Klaus D. McDonald-Maier   +5 more
doaj   +1 more source