Results 41 to 50 of about 8,141,274 (193)

Using machine learning for anomaly detection on a system-on-chip under gamma radiation

Nuclear Engineering and Technology, 2022
The emergence of new nanoscale technologies has imposed significant challenges to designing reliable electronic systems in radiation environments. A few types of radiation like Total Ionizing Dose (TID) can cause permanent damages on such nanoscale ...
Eduardo Weber Wächter, Server Kasap, Şefki Kolozali, Xiaojun Zhai, Shoaib Ehsan, Klaus D. McDonald-Maier   +5 more
doaj   +1 more source

Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing

IEEE Access, 2019
The total ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried oxide layer.
Xiaoqiang Liu, Li Cai, Baojun Liu, Xiaokuo Yang, Huanqing Cui, Cheng Li   +5 more
doaj   +1 more source

Energetic Offset in Organic Solar Cells‐ Importance, Confusion and Outlook

Advanced Materials, EarlyView.
Energetic offsets in organic solar cells (OSCs) remain a subject of debate due to measurement‐ and lab‐dependent discrepancies. This Perspective clarifies the physical origins of these variations and identifies temperature‐dependent electro‐optical methods as a reliable approach to obtain consistent offset values.
Nakul Jain, Xian'e Li, Mats Fahlman, Olle Inganäs, Koen Vandewal, Feng Gao   +5 more
wiley   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

IEEE Access, 2023
Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this study, we considered the operating states, dose rates, temperatures, and annealing to analyze the ...
Gyeongyeop Lee, Minki Suh, Minsang Ryu, Yunjong Lee, Jin-Woo Han, Jungsik Kim   +5 more
doaj   +1 more source

Tamper‐Responsive Physical Unclonable Functions via Graphene‐Interlayered Block Copolymer Random Structures

Advanced Materials, EarlyView.
Self‐invalidating multilayer physical unclonable functions (PUFs) integrate fingerprint‐like metal nanopattern bilayers from block copolymer templates with highly reactive reduced graphene oxide (rGO) interlayers. This tamper‐responsive architecture blocks all unauthorized physical and chemical replication attempts while autonomously deactivating ...
Gyu Hui Jo, Dae Hui Park, Jeong‐Ho Jang, Woo Seok Tack, Jin Man Kim, Hak Ki Yu, Hyeong Min Jin, Jang Hwan Kim   +7 more
wiley   +1 more source

Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics

IEEE Transactions on Nuclear Science, 2017
Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low $10^{11}$ cm $^{\mathrm {-2}}$ eV $^{\mathrm {-1}}$ range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al2O3/La2O3 and Al2O3/La1.8Y0.2O3 gate oxides. Charge
Shufeng Ren, Maruf A. Bhuiyan, Jingyun Zhang, Xiabing Lou, Mengwei Si, Xian Gong, Rong Jiang, Kai Ni, Xin Wan, En Xia Zhang, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, T. P. Ma   +14 more
openaire   +1 more source

Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors

IEEE Access, 2019
Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications.
Shuyun Zheng, Yun Zeng, Zhuojun Chen
doaj   +1 more source

Robotics in Ionizing Radiation Environments: Vulnerabilities, Hardening, and Future Directions

Advanced Robotics Research, EarlyView.
Radiation exposure causes cumulative degradation in robotic sensors, actuators, and electronic logic, often leading to undetected failures. This study maps component vulnerabilities, evaluates hardening and shielding strategies, and identifies testing gaps that must be addressed to enable next‐generation radiation‐tolerant robotic systems.
Francis A. K. Djirackor, Josephine T. Djirackor, Amanuel Abrdo Tereda, Sun Yi, Younho Seong   +4 more
wiley   +1 more source

Investigations on MGy Total Ionizing Dose Effects in CMOSTechnologies

, 2015
International audienceThis work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics.
Gaillardin, M., Martinez, Martial, Olivier, Duhamel, Goiffon, Vincent, Raine, Melanie, Paillet, Philippe, Girard, Sylvain, Marcandella, Claude, Magnan, Pierre   +8 more
core   +2 more sources