Results 61 to 70 of about 554 (150)
This work demonstrates ultrathin, flexible perovskite solar cells exhibiting exceptional gamma‐ray radiation tolerance. By integrating a radiation‐tolerant perovskite solar cell with an ultrathin parylene/SU‐8 plastic substrate, the cells maintain power conversion efficiencies of 15.0% after severe total ionizing dose conditions up to 890 krad (Si ...
Hiroaki Jinno +5 more
wiley +1 more source
The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous (P7+) and 80 MeV nitrogen (N6+) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1
Vinayakprasanna N. Hegde +7 more
doaj +1 more source
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations
This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event ...
Linjie Fan +3 more
doaj +1 more source
This review highlights the integration of metal‐organic frameworks (MOFs) and two‐dimensional (2D) materials through dimensional interface engineering. By addressing intrinsic limitations like poor conductivity and agglomeration, these hybrid architectures optimize interfacial charge and mass transport.
Prashant Dubey +7 more
wiley +1 more source
Skin adverse events (AEs) frequently accompany all types of anticancer treatments. This publication discusses how recent international guidance on best‐practices use of dermocosmetics can be adapted to the North Asia region (China, Hong Kong, Japan, Republic of Korea, and Taiwan).
Meng Pan +9 more
wiley +1 more source
Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET
Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation ...
Hyeonjae Won +3 more
doaj +1 more source
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Test-bed of Total Ionizing Dose (TID) Test by Cosmic Rays for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) [PDF]
Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft`s life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time.
openaire +1 more source
Total Ionizing Dose and Single-Event Effect Response of the AD524CDZ Instrumentation Amplifier
This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose 60Co irradiation.
Jaime Cardenas Chavez +5 more
doaj +1 more source
This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation.
El Hafed Boufouss +5 more
doaj +1 more source

