Results 71 to 80 of about 554 (150)
Carbon nanotube field effect transistors (CNTFETs) are considered ideal components for radiation-hardened integrated circuits (ICs) due to their material and structural properties.
Yanan Liang +6 more
doaj +1 more source
Radiation Tolerant, Low Noise Phase Locked Loops in 65 nm CMOS Technology
This work presents an introduction to radiation hardened Phase Locked Loops (PLLs) for nuclear and high-energy physics application. An experimental circuit has been fabricated and irradiated with Xrays up to 600 Mrad.
Prinzie Jeffrey +4 more
doaj +1 more source
Total Ionizing Dose Effects Investigation on the Performance of MEMS Microphone Irradiated by γ-Ray
Data collected by sensors plays a critical role in system decision-making. Microphone arrays enable distance measurement and fault localization, which is particularly critical in the radiation environments of nuclear facilities.
Panfeng Zhang +7 more
doaj +1 more source
Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj +1 more source
Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects.
Minuk Seung +3 more
doaj +1 more source
Radiation effect of the device becomes more important with the development of aerospace due to them may change the state or even destroy the device. The major types of the radiation effect include single event effect (SEE), total ionizing dose (TID) and
ZHANG Fuqiang1, ZHANG Zheng1, XIAO Shuyan1, GONG Yihao1, HAN Jinhua1, CHEN Qiming1, ZENG Chuanbin2, GUO Gang1
doaj +1 more source
http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references
Thiago Hanna Both +3 more
doaj
Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices. [PDF]
Wu H +9 more
europepmc +1 more source
Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]
Fernandes L +20 more
europepmc +1 more source
γ Radiation Effects on Transition Metal Dichalcogenides: A Review of Defect Mechanisms and Device Implications. [PDF]
Kreusch D, Araujo-Moreira FM.
europepmc +1 more source

