Results 71 to 80 of about 8,141,274 (193)

Caratterizzazione pre e post irraggiamento di transistor in tecnologia CMOS 65 nm [PDF]

open access: yes, 2022
E' stata studiata la risposta di transistor PMOS e NMOS, in una tecnologia commerciale CHOS 65 nm, ad effetti di total ionizing dose fino a 1Grad (SiO2 ...
Baruffaldi, Filippo
core  

The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles

open access: yesActa Physica Sinica, 2010
Total ionizing dose (TID) effects of the deep submicron MOSFET (metal oxide semiconductor field effect transistor) with delta doping profiles and uniform doping profiles in the channel region are analyzed in this paper. The influence of both doping profiles on the leakage current and threshold voltage is investigated. The results show that, the leakage
null Wang Si-Hao   +4 more
openaire   +1 more source

Integrated Phylogenetic, Phytochemical, and In Silico Evaluation of Equisetum diffusum D. Don. Ethanolic Extract for Bioactivity

open access: yesChemistry &Biodiversity, Volume 23, Issue 10, October 2026.
ABSTRACT This study investigated the antibacterial and antioxidant potential of Equisetum diffusum D. Don. using in vitro assays, molecular docking, GC‐MS, HPLC, phytochemical screening, ADME, toxicity, and phylogenetic analyses. Phytochemical screening confirmed the presence of alkaloids, flavonoids, phenols, saponins, and fatty acids in the extracts.
Nasir Assad   +10 more
wiley   +1 more source

Online Threshold Voltage Monitoring for Silicon Carbide Planar and Trench MOSFETs under γ-Ray Exposure

open access: yesSpace: Science & Technology
Traditional threshold-voltage (Vth) measurements are usually performed either offline or during in situ state monitoring, are typically conducted offline or in situ state monitoring, limiting their ability to assess Vth accurately during the aging ...
Xinlan Hou   +7 more
doaj   +1 more source

Progress report on new epilepsy treatments: A summary of the Eighteenth Eilat Conference on New Antiepileptic Drugs and Devices (EILAT XVIII). II. Treatments in more advanced clinical development

open access: yesEpilepsia, Volume 67, Issue 10, Page 5075-5125, October 2026.
Abstract This article summarizes data for 13 investigational treatments for which at least preliminary seizure outcome data in patients with epilepsy were reported at the Eighteenth Eilat Conference on New Antiepileptic Drugs and Devices held in Madrid, Spain, on May 3–6, 2026.
Meir Bialer   +7 more
wiley   +1 more source

Progress report on new epilepsy treatments: A summary of the Eighteenth Eilat Conference on New Antiepileptic Drugs and Devices (EILAT XVIII). I. Treatments in preclinical and early clinical development

open access: yesEpilepsia, Volume 67, Issue 10, Page 5042-5074, October 2026.
Abstract Over the last 34 years, the Eilat Conference on New Antiepileptic Drugs and Devices has provided an interactive forum for stakeholders to discuss investigational and recently licensed treatments for seizures and epilepsy. The Eighteenth Eilat Conference on New Antiepileptic Drugs and Devices (EILAT XVIII) took place in Madrid, Spain, on May 3 ...
Meir Bialer   +7 more
wiley   +1 more source

Is Capsaicin Effective in Relieving the Symptoms of Burning Mouth Syndrome? A Systematic Review

open access: yesJournal of Oral Rehabilitation, Volume 53, Issue 10, Page 1985-1996, October 2026.
The capsaicin, administered topically or systemically, reduces pain symptoms in patients with Burning Mouth Syndrome (BMS). However, despite consistent clinical improvement, the current evidence is limited and of low certainty, highlighting the need for well‐designed studies to confirm its effectiveness. ABSTRACT Background Burning Mouth Syndrome (BMS)
Ana Paula de Andrade Silva   +7 more
wiley   +1 more source

Evaluation of High Performance Converters Under Low Dose Rate Total Ionizing Dose (TID) Testing for NASA Programs [PDF]

open access: yes, 1998
This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) tests performed on several types of high performance converters. The parts used in this evaluation represented devices such as a high speed flash converter,
Sahu, Kusum, Sharma, Ashok K.
core  

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

open access: yesSolid State Phenomena
In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes.
Jae Hwa Seo   +3 more
openaire   +1 more source

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

open access: yesAIP Advances, 2016
The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the
Zujun Wang   +8 more
doaj   +1 more source

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