Results 71 to 80 of about 554 (150)

Investigating the Electric Field Influence on Total Ionization Dose Effects in Space Radiation for Carbon Nanotube Field Effect Transistors

open access: yesIEEE Access
Carbon nanotube field effect transistors (CNTFETs) are considered ideal components for radiation-hardened integrated circuits (ICs) due to their material and structural properties.
Yanan Liang   +6 more
doaj   +1 more source

Radiation Tolerant, Low Noise Phase Locked Loops in 65 nm CMOS Technology

open access: yesEPJ Web of Conferences, 2018
This work presents an introduction to radiation hardened Phase Locked Loops (PLLs) for nuclear and high-energy physics application. An experimental circuit has been fabricated and irradiated with Xrays up to 600 Mrad.
Prinzie Jeffrey   +4 more
doaj   +1 more source

Total Ionizing Dose Effects Investigation on the Performance of MEMS Microphone Irradiated by γ-Ray

open access: yesApplied System Innovation
Data collected by sensors plays a critical role in system decision-making. Microphone arrays enable distance measurement and fault localization, which is particularly critical in the radiation environments of nuclear facilities.
Panfeng Zhang   +7 more
doaj   +1 more source

Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM

open access: yesYuanzineng kexue jishu
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj   +1 more source

Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

open access: yesNuclear Engineering and Technology
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects.
Minuk Seung   +3 more
doaj   +1 more source

Calculation Method of Single Event Upset Induced Soft Error Rate and Its Uncertainty under Space Mixed Beam Environment

open access: yesYuanzineng kexue jishu
Radiation effect of the device becomes more important with the development of aerospace due to them may change the state or even destroy the device. The major types of the radiation effect include single event effect (SEE), total ionizing dose (TID) and
ZHANG Fuqiang1, ZHANG Zheng1, XIAO Shuyan1, GONG Yihao1, HAN Jinhua1, CHEN Qiming1, ZENG Chuanbin2, GUO Gang1
doaj   +1 more source

Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

open access: yesJournal of Aerospace Technology and Management, 2013
http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references
Thiago Hanna Both   +3 more
doaj  

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices. [PDF]

open access: yesMicromachines (Basel), 2023
Wu H   +9 more
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

open access: yesNano Lett
Fernandes L   +20 more
europepmc   +1 more source

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