Results 91 to 100 of about 8,141,274 (193)

Total Ionizing Dose Effects in Si-Based Tunnel FETs

open access: yes, 2014
Total ionizing dose (TID) effects in Si-based tunnel fi- nite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the in- crease in total dose, a shift of the transfer characteristics and ...
Simone Gerardin   +18 more
core   +1 more source

Arduino-Raspberry Pi: Hobbyist Hardware and Radiation Total Dose Degradation [PDF]

open access: yes, 2014
This presentation covers top-level total ionizing dose (TID) testing and evaluation of commercial CubeSat hardware modules from Arduino and ...
Violette, Daniel P.
core  

Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver

open access: yes, 2020
This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO$_2$).
Jaksch, M   +5 more
core   +1 more source

Total Ionizing Dose testing of a current sense amplifier for space applications

open access: yes
The work presented in this paper shows the results of the Total Ionizing Dose (TID) test on current sense amplifiers of the series INA240A4-Q1.
Aksteiner, Niklas   +4 more
core   +1 more source

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB [PDF]

open access: yes, 2017
Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested.
Yau, K., Campola, M., Freeman, B.
core  

TID and SEE Testing Results of Altera Cyclone Field Programmable Gate Array [PDF]

open access: yes, 2004
Total ionizing dose (TID) and single event effects testing was performed on Altera Cyclone FPGAs. The devices exhibit slight performance degradation to a TID of 1 Mrad (Si), but also exhibited single event latchup at a low ...
Parker, R.   +5 more
core   +1 more source

Total Ionizing Dose and Single-Event Effect Response of the AD524CDZ Instrumentation Amplifier

open access: yesEnergies
This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose 60Co irradiation.
Jaime Cardenas Chavez   +5 more
doaj   +1 more source

Total Ionizing Dose Effects in Bipolar and BiCMOS Devices

open access: yes, 2005
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels.
Johnston, Allan H.   +4 more
core  

Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons

open access: yes, 2015
The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7×1014 p/cm2 is equivalent to 9.5MGy(SiO2) total dose and 7.7×1015 n/cm2 1MeV neutron ...
GERARDIN, SIMONE   +5 more
core   +2 more sources

Test Results of Total Ionizing Dose Conducted at the Jet Propulsion Laboratory

open access: yes, 2004
This paper reports recent Total Ionizing Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased ...
Johnston, Allan H.   +4 more
core  

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