The mechanism of oxidative stress in asthenozoospermia and antioxidant strategies: a review. [PDF]
Mo L +6 more
europepmc +1 more source
Pediatric Medical Countermeasures: Antidotes and Cytokines for Radiological and Nuclear Incidents and Terrorism. [PDF]
Maciulewicz TS +8 more
europepmc +1 more source
Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations. [PDF]
Merzi S +8 more
europepmc +1 more source
Survey of radiological optimization processes in Swedish hospitals-similarities and differences between different modalities. [PDF]
Svalkvist A +4 more
europepmc +1 more source
TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor. [PDF]
Aishwarya K, Lakshmi B.
europepmc +1 more source
Enhancing the Reliability of AD936x-Based SDRs for Aerospace Applications via Active Register Scrubbing and Autonomous Fault Recovery. [PDF]
Wang J, Wang Z, Zhou L.
europepmc +1 more source
Evaluation by Proton-Radiation Tests of a COTS-Embedded Computer Running the cFS Flight-Mission Software for a Nanosatellite. [PDF]
Vargas V +4 more
europepmc +1 more source
Design of a Compact Space Search Coil Magnetometer. [PDF]
Jang Y +5 more
europepmc +1 more source
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device [PDF]
Abstract The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance ...
Jer-Chyi Wang +2 more
exaly +4 more sources
Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices [PDF]
This paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO[Formula: see text] interface traps in MOS devices, and their density of states across the energy band in a non-uniform manner. The model incorporates the DCIV technique to determine the density of states of interface traps and accounts for quantum tunneling (QT)
Ali Khoshnoud, Javad Yavandhassani
exaly +5 more sources

