Results 111 to 120 of about 8,141,274 (193)

Synergistic effects of total ionizing dose and displacement damage on bipolar and BiCMOS circuits in high energy physics applications [PDF]

openAt CERN, the functionality of the accelerator complex depends significantly on the reliability of electronic control devices. The environment inside the structures hosting particle accelerators is particularly hostile to electronic components due to ...
ANDREETTA, GABRIELE
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Design of micropower operational transconductance amplifiers for high total ionizing dose effects

, 2019
Summarization: The design of radiation-hard analog/mixed signal Integrated Circuits for high Total Ionizing Dose (TID) is a challenging task. Front-end electronics for the High-Luminosity Large Hadron Collider (HL-LHC) are expected to be exposed to doses
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris), Bucher Matthias(http://users.isc.tuc.gr/~mbucher), Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou), Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou), Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou), Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas), Makris Nikolaos(http://users.isc.tuc.gr/~NMakris), Chevas Loukas(http://users.isc.tuc.gr/~lchevas), Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)   +8 more
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Compensation of Total Ionizing Dose Effects in ULV SoCs Through Adaptive Voltage Scaling

, 2014
Total ionizing dose (TID) jeopardizes the operation of ULV circuits by shifting the threshold voltage of the devices. Measurements on a 65nm SoC show that it modifies the output of an on-chip 4-T voltage reference by 3.5% and the gate delay at ULV by 17%.
Bol, David, Kilchytska, Valeriya, Flandre, Denis, De Vos, Julien, 2014 IEEE SOI-3D Subthreshold Microelectronics Technology Unified Conference (S3S)   +4 more
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Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector

Nuclear Engineering and Technology
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects.
Minuk Seung, Jong-Gyun Choi, Woo-young Choi, Inyong Kwon   +3 more
doaj   +1 more source

Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

Journal of Aerospace Technology and Management, 2013
http://dx.doi.org/10.5028/jatm.v5i3.227 The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references
Thiago Hanna Both, Dalton Colombo, Ricardo Vanni Dallasen, Gilson Inácio Wirth   +3 more
doaj  

Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs

International audienceIn this work, the total ionizing dose in 0.13μm and 55nm SiGe: C HBTs are presented. The HBTs were exposed a maximum TID of 950 krad. Moreover, the impact of geometry was investigated.
Hoffmann, Alain, Maraine, Tadec, Pascal, Fabien, Chevalier, Pascal, Sagnes, Bruno, Gloria, Daniel, Boch, Jérôme, Bouhouche, Menel, Adebabay Belie, A., Haendler, Sébastien   +9 more
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Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states.
Chaoming Liu, Liyi Xiao, Rigen Mo, Yuhang Wang, Tianqi Wang, Mingxue Huo, Xuesong Zheng   +6 more
core   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices. [PDF]

Micromachines (Basel), 2023
Wu H, Fu X, Luo J, Yang M, Yang X, Huang W, Zhang H, Xiang F, Pu Y, Wang Z.   +9 more
europepmc   +1 more source

Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors

International audienceIn this work, the total ionizing dose in 0.13µm and 55nm SiGe: C HBTs are presented. The HBTs were exposed a maximum TID of 950 krad. Moreover, the impact of geometry was investigated.
Hoffmann, Alain, Maraine, Tadec, Pascal, Fabien, Chevalier, Pascal, Adebabay Belie, A, Sagnes, Bruno, Gloria, Daniel, Boch, Jérôme, Bouhouche, Menel, Haendler, Sebastien   +9 more
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