Results 121 to 130 of about 558 (154)
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages
IEEE Transactions on Device and Materials Reliability, 2023 This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage ...
Mustafa Berke Yelten, Sadik Ilik
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Total Ionizing Dose (TID) of Phase Change Random Access Memory
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED), 2021Phase Change Random Access Memory (PCRAM) were irradiated by 60Co γ-rays and electron beam, and used different temperature to anneal after irradiation. The DC parameters and function were tested by very large scale integrated (VLSI) circuit tester. The function of device was failure in radiation, and some DC parameters as radiation-sensitive parameters
Xingyao Zhang +3 more
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2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES), 2018
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated ...
Matthias Bucher +2 more
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Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated ...
Matthias Bucher +2 more
exaly +4 more sources
Total Ionization Dose (TID) Effects on 2D MOS Devices
Transactions on Electrical and Electronic Materials, 2020Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single
Shashi Bala, Raj Kumar, Arvind Kumar
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Extended Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), 2022Stephanie Zajac +9 more
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Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory
IEEE Transactions on Electron Devices, 2011In this brief, the total ionizing dose (TID) effects of γ rays generated from a 60Co source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on
Yimao Cai
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Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018Leif Scheick
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Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
Sensors and Actuators A: Physical, 2015Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 ...
Diego Ramirez Munoz
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Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference, 2002Low dose rate radiation testing in the range of 0.01-0.20 rads(Si)/s has been performed at Goddard Space Flight Center on a wide variety of non-RH (rad-hard) part types in the last few years. This paper reports on recent test results of EEPROMs, Operational Amplifiers, Analog-to-Digital Converters (ADCs) and Digital-to-Analog Converters (DACs), and DC ...
A.K. Sharma, K. Sahu, S. Brashears
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2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020
This paper investigates flight circuit application bias and irradiation dose rate dependencies ("test as you fly" conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
Amanda N. Bozovich +4 more
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This paper investigates flight circuit application bias and irradiation dose rate dependencies ("test as you fly" conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
Amanda N. Bozovich +4 more
exaly +2 more sources