Results 121 to 130 of about 554 (150)
Total Ionizing Dose (TID) effects on finger transistors in a 65nm CMOS process [PDF]
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016 Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
Jize Jiang +2 more
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2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES), 2018
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated ...
Loukas Chevas +2 more
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Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). In the present paper, geometrical scaling of key analog design parameters of MOS transistors irradiated ...
Loukas Chevas +2 more
exaly +4 more sources
Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory
IEEE Transactions on Electron Devices, 2011In this brief, the total ionizing dose (TID) effects of γ rays generated from a 60Co source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on
Poren Tang, Fei Tan
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Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM [PDF]
2007 IEEE Radiation Effects Data Workshop, 2007 We report on TID tests of magnetoresistive random access memory (MRAM), and advanced 4 Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.
D N Nguyen, F Irom
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Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018Leif Z Scheick
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2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020
This paper investigates flight circuit application bias and irradiation dose rate dependencies ("test as you fly" conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
Amanda N. Bozovich +4 more
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This paper investigates flight circuit application bias and irradiation dose rate dependencies ("test as you fly" conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
Amanda N. Bozovich +4 more
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Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
Sensors and Actuators A: Physical, 2015Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 ...
Diego Ramirez Munoz +2 more
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Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs
1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference, 2002Low dose rate radiation testing in the range of 0.01-0.20 rads(Si)/s has been performed at Goddard Space Flight Center on a wide variety of non-RH (rad-hard) part types in the last few years. This paper reports on recent test results of EEPROMs, Operational Amplifiers, Analog-to-Digital Converters (ADCs) and Digital-to-Analog Converters (DACs), and DC ...
A.K. Sharma, K. Sahu, S. Brashears
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Updated Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020We present the results of total ionizing dose testing and analysis on Electric, Electronic, and Electromechanical (EEE) parts, tested by the Jet Propulsion Laboratory in support of the Europa Clipper Mission.
Stephanie A. Zajac +10 more
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IEEE Transactions on Nuclear Science, 2017 Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs.
Maruf A Bhuiyan, Rong Jiang, Kai Ni
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