Results 141 to 150 of about 558 (154)

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

IEEE Transactions on Nuclear Science, 2015
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise
Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhang, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Sharon Cui, T. P. Ma   +12 more
openaire   +1 more source

Electron irradiation total ionizing dose (TID) effect of tunneling magnetoresistance sensors

Journal of Magnetism and Magnetic Materials, 2022
Y. Zhang, Y.Z. Wang, X.F. Han, H. Deng, H. Huang, J.H. Guo, Y. Liang, W.R. Si, A.F. Jiang, H.F. Liu, J.F. Feng, C.H. Wan, L. Yin, G.Q. Yu   +13 more
openaire   +1 more source

Compendium of Single Event Transient (SET) and Total Ionizing Dose (TID) Test Results for Commonly Used Voltage Comparators

2017 IEEE Radiation Effects Data Workshop (REDW), 2017
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot
Amanda N. Bozovich, Farokh Irom
exaly   +2 more sources

Total ionizing dose (TID) and displacement damage (DD) analyses for different space missions

AIP Conference Proceedings, 2023
Bugra Kocaman, Murat Harmandali
openaire   +1 more source

Total ionizing dose effects on nanosheet and nanowire field effect transistors

Microelectronics Reliability, 2021
Jungsik Kim, M Meyyappan, Jin-Woo Han
exaly  

Total Ionizing Dose (TID) Effects on Variability and Mismatch in MOSFETs with Novel Layouts

2025 39th Symposium on Microelectronics Technology and Devices (SBMicro)
Vinicius Vono Peruzzi, Gabriel Augusto da Silva, Luís Eduardo Seixas, Wellington Romeiro de Melo, Saulo Finco, Salvador Pinillos Gimenez   +5 more
openaire   +1 more source

Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies

Electronics (Switzerland), 2022
Li Chen, Zongru Li, Jiesi Xing
exaly  

Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), 2014
Joseph S. Chang, Kwen-Siong Chong, Wei Shu, Tong Lin 0001, Jize Jiang, Ne Kyaw Zwa Lwin, Yang Kang   +6 more
openaire   +1 more source

TESTE EM COMPONENTE CRÍTICO DE USO ESPACIAL: ENSAIO DE DOSE IONIZANTE TOTAL, (TID - TOTAL IONIZING DOSE) EM TRANSISTORES 2N2222A

2020
Bruno Carneiro Junqueira, Silvio Manea, Rafael Galhardo Vaz, Odair Lelis Gonçalez   +3 more
openaire   +1 more source

Total Ionizing Dose (TID) effect on the IHEP-IME strip-typed AC-LGAD sensor

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Weiyi Sun, Zhijun Liang, Mei Zhao, Mengzhao Li, Xu Huang, Tianya Wu   +5 more
openaire   +1 more source