Results 131 to 140 of about 554 (150)
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Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs
Semiconductor Science and Technology, 2013This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (Ioff) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation ...
Fei Tan +8 more
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A Review of Dose Rate Dependent Effects of Total Ionizing Dose (TID) Irradiations
IEEE Transactions on Nuclear Science, 1980The literature has been reviewed in order to arrive at firm conclusions regarding total dose test procedures. The most important results are that there is little evidence for true dose rate effects for rates less than 10 rad/min. Hence a Cobalt-60 simulation of space radiation effects is completely valid if the irradiation bursts are greater than a few
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Research on Combinatorial Feature of Total Ionizing Dose (TID) Effect on Interconnect
2019In mixed-mode simulation of this paper, the copper interconnect line structure in VDSM (very deep submicron) was connected to a circuit with the silica-based device (on-chip or inter-chip). A physical model of the mass transport of Cu interconnect is found based on the vacancy exchange mechanism based on a continuity equation on Cu diffusion including ...
Xiaofei Xu, Denghua Li, Shuhui Yang
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2018 International Semiconductor Conference (CAS), 2018
High doses of ionizing radiation drastically impair the electrical performance of CMOS technology. Enclosed gate layout remains an effective means to reduce this impact. Nevertheless, high total ionizing dose (TID) effects remain strong. The paper presents an effective approach to analytically model high TID effects in both NMOS and PMOS transistors ...
Matthias Bucher +2 more
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High doses of ionizing radiation drastically impair the electrical performance of CMOS technology. Enclosed gate layout remains an effective means to reduce this impact. Nevertheless, high total ionizing dose (TID) effects remain strong. The paper presents an effective approach to analytically model high TID effects in both NMOS and PMOS transistors ...
Matthias Bucher +2 more
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Microelectronics Reliability, 2020
Abstract Total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) are investigated using TCAD simulations. First, two types of TFET structures are constructed numerically. Then the electrical properties of these devices are studied under different irradiation doses,
Gangping Yan +6 more
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Abstract Total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) are investigated using TCAD simulations. First, two types of TFET structures are constructed numerically. Then the electrical properties of these devices are studied under different irradiation doses,
Gangping Yan +6 more
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2009 IEEE Radiation Effects Data Workshop, 2009
An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.
Romney R. Katti +5 more
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An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.
Romney R. Katti +5 more
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1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference, 2002
This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic
A.K. Sharma, K. Sahu
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This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic
A.K. Sharma, K. Sahu
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2010 IEEE Radiation Effects Data Workshop, 2010
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad
Jason Heidecker +2 more
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A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad
Jason Heidecker +2 more
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IEEE Transactions on Nuclear Science, 2015
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise
Shufeng Ren +12 more
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InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise
Shufeng Ren +12 more
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2017 IEEE Radiation Effects Data Workshop (REDW), 2017
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot
Amanda N. Bozovich, Farokh Irom
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This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot
Amanda N. Bozovich, Farokh Irom
exaly +2 more sources