Results 131 to 140 of about 558 (154)

Updated Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020
We present the results of total ionizing dose testing and analysis on Electric, Electronic, and Electromechanical (EEE) parts, tested by the Jet Propulsion Laboratory in support of the Europa Clipper Mission.
Stephanie A. Zajac, Amanda N. Bozovich, Bernard G. Rax, Joe Davila, Duc Nguyen, Wilson P. Parker, Aaron J. Kenna, Steven S. McClure, Jason L. Thomas, Kelly W. Stanford, Mitch J. Sundgaard   +10 more
exaly   +2 more sources

Research on Combinatorial Feature of Total Ionizing Dose (TID) Effect on Interconnect

2019
In mixed-mode simulation of this paper, the copper interconnect line structure in VDSM (very deep submicron) was connected to a circuit with the silica-based device (on-chip or inter-chip). A physical model of the mass transport of Cu interconnect is found based on the vacancy exchange mechanism based on a continuity equation on Cu diffusion including ...
Xiaofei Xu, Denghua Li, Shuhui Yang
openaire   +1 more source

Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

Semiconductor Science and Technology, 2013
This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time. After exposure to gamma rays, the off-state leakage current (Ioff) of a quasi-SOI device increases with the accumulating TID, and the on-state bias configuration is shown to be the worst-case bias configuration during irradiation ...
Fei Tan, Ru Huang, Xia An, Weikang Wu, Hui Feng, Liangxi Huang, Jiewen Fan, Xing Zhang, Yangyuan Wang   +8 more
openaire   +1 more source

Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel

IEEE Transactions on Nuclear Science, 2017
Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs.
Peide Ye, Robert Reed, Kai Ni
exaly   +2 more sources

A Review of Dose Rate Dependent Effects of Total Ionizing Dose (TID) Irradiations

IEEE Transactions on Nuclear Science, 1980
The literature has been reviewed in order to arrive at firm conclusions regarding total dose test procedures. The most important results are that there is little evidence for true dose rate effects for rates less than 10 rad/min. Hence a Cobalt-60 simulation of space radiation effects is completely valid if the irradiation bursts are greater than a few
openaire   +1 more source

Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS

2018 International Semiconductor Conference (CAS), 2018
High doses of ionizing radiation drastically impair the electrical performance of CMOS technology. Enclosed gate layout remains an effective means to reduce this impact. Nevertheless, high total ionizing dose (TID) effects remain strong. The paper presents an effective approach to analytically model high TID effects in both NMOS and PMOS transistors ...
Federico Faccio, Matthias Bucher, Loukas Chevas   +2 more
exaly   +3 more sources

Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)

Microelectronics Reliability, 2020
Abstract Total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) are investigated using TCAD simulations. First, two types of TFET structures are constructed numerically. Then the electrical properties of these devices are studied under different irradiation doses,
Gangping Yan, Gaobo Xu, Jinshun Bi, Guoliang Tian, Qiuxia Xu, Huaxiang Yin, Yongliang Li   +6 more
openaire   +1 more source

Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference, 2002
This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic
A.K. Sharma, K. Sahu
openaire   +1 more source

Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2009 IEEE Radiation Effects Data Workshop, 2009
An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2 /mg for fluences to 10 8 ions/cm 2 ; and TED hardness in excess of 1 Mrad.
Romney R. Katti, John Lintz, Lance Sundstrom, Tony Marques, Steve Scoppettuolo, Douglas Martin   +5 more
openaire   +1 more source

Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2010 IEEE Radiation Effects Data Workshop, 2010
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad
Jason Heidecker, Gregory Allen, Douglas Sheldon   +2 more
openaire   +1 more source