Results 151 to 160 of about 8,141,274 (193)

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs. [PDF]

Micromachines (Basel)
Wei H, Liu H, Wang S, Chen S, Yin C, Chen Y, Gao T.   +6 more
europepmc   +1 more source

Novel approach to long-term monitoring of accelerator-based boron neutron capture therapy. [PDF]

Med Phys
Takada M, Yagi N, Shimada K, Fujii R, Nakamura M, Nakamura S, Kato S, Nunomiya T, Aoyama K, Narita M, Nakamura T.   +10 more
europepmc   +1 more source

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage. [PDF]

Sensors (Basel)
Wang ZJ, Xue YY, Tang N, Huang G, Nie X, Lai SK, He BP, Ma WY, Sheng JK, Gou SL.   +9 more
europepmc   +1 more source

Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors. [PDF]

Nanomicro Lett
Girolami M, Matteocci F, Pettinato S, Serpente V, Bolli E, Paci B, Generosi A, Salvatori S, Di Carlo A, Trucchi DM.   +9 more
europepmc   +1 more source

Systematic review of physical and dosimetric criteria for managing CIEDs in radiotherapy: A medical physicist's perspective. [PDF]

J Appl Clin Med Phys
Malatesta T, Barbareschi A, Alaimo R, Mezzenga E, Brambilla MG, Delana A, Andreoli S, Consorti R, Ren Kaiser S, Mapelli M, Moretti E, Mormile M, Rambaldi Guidasci G, Severgnini M, Strigari L, Falco MD.   +15 more
europepmc   +1 more source

The Route of Administration Determines the Efficacy of Zinc in Preventing Radiation-Induced Oral Mucositis: A Systematic Review and Meta-Analysis. [PDF]

Curr Oncol
Tsao CS, Wang KY, Liao CY.
europepmc   +1 more source

Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

IEEE Transactions on Device and Materials Reliability, 2023
<p>This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations.
Mustafa Berke Yelten, Sadik Ilik
exaly   +4 more sources

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS.
Jize Jiang, Wei Shu
exaly   +4 more sources

Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES), 2018
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID).
Matthias Andrin Bucher, Loukas Chevas, Nikolaos Makris   +2 more
exaly   +7 more sources

Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS

2018 International Semiconductor Conference (CAS), 2018
Summarization: High doses of ionizing radiation drastically impair the electrical performance of CMOS technology. Enclosed gate layout remains an effective means to reduce this impact.
Federico Faccio, Matthias Andrin Bucher, Loukas Chevas   +2 more
exaly   +4 more sources