Results 101 to 110 of about 8,141,274 (193)

Total-ionizing-dose effects on commercial 3-D NAND flash memory chips

, 2023
Commercial NAND flash memories are very attractive for space applications, characterized by their compact form factor, low weight, high bit density, and energy efficient performance.
Kumar, Mondol Anik
core  

Investigating the Electric Field Influence on Total Ionization Dose Effects in Space Radiation for Carbon Nanotube Field Effect Transistors

IEEE Access
Carbon nanotube field effect transistors (CNTFETs) are considered ideal components for radiation-hardened integrated circuits (ICs) due to their material and structural properties.
Yanan Liang, Qian Chen, Rui Chen, Runjie Yuan, Ziyu Wang, Hailong Yu, Jianwei Han   +6 more
doaj   +1 more source

In-orbit monitoring for dynamic detector-oriented containment of TID-induced degradation in CMOS-TDI sensor systems

Scientific Reports
Space-borne CMOS-based sensor systems with time delay and integration (TDI) functionality are susceptible to the radiation environment in orbit. Total ionizing dose (TID) impacts CMOS detector structures and considerably deteriorates performance and ...
Johannes Buschek, Evgeny Chernyavskiy, Gerhard Kahmen, Andreas Eckardt   +3 more
doaj   +1 more source

Analysis of the Effects of Proton Energy and Silicon Detector Thickness on the Total Ionizing Dose (TID) Using Phits Monte Carlo Simulation

PILLAR OF PHYSICS
This study analyzes the effects of proton energy and silicon detector thickness on particle distribution and dosimetric response using Monte Carlo simulations based on the Particle and Heavy Ion Transport System (PHITS) code. Simulations were performed at two proton energies, namely 25 MeV and 100 MeV, with variations in silicon detector thickness ...
Sitti Yani, Siti Karmilah Syahri Fartini, Rima Fitria Adiati, Tony Sumaryada   +3 more
openaire   +1 more source

Total ionizing dose effects on CMOS devices in a 110 nm technology

, 2017
A detailed characterization of CMOS devices in a technology process with minimum channel length of 110 nm and manufactured by UMC is reported in this work.
Manghisoni, Massimo, Gaioni, Luigi, Riceputi, Elisa, Re, Valerio   +3 more
core   +1 more source

A new approach for Total Ionizing Dose effect analysis on Flash-based FPGA

, 2017
With the high flexibility, increasing computing power and lower power consumption, FPGA devices have gained a lot interest in space and avionic applications.
AZIMI, SARAH, Sarah Azimi, LA VACCARA, GERMANO, Zhang, Qiutao, Qiutao Zhang, DU, BOYANG, Germano La Vaccara, STERPONE, LUCA, Luca Sterpone, Boyang Du   +9 more
core   +1 more source

Total Ionizing Dose Effects Investigation on the Performance of MEMS Microphone Irradiated by γ-Ray

Applied System Innovation
Data collected by sensors plays a critical role in system decision-making. Microphone arrays enable distance measurement and fault localization, which is particularly critical in the radiation environments of nuclear facilities.
Panfeng Zhang, Xuecheng Du, Chao Ma, Yiran Wu, Zhenya Li, Hao Yun, Jiajun Wei, Zhirui Zheng   +7 more
doaj   +1 more source

Total Ionizing Dose Effects in Carbon Nanotube Network Transistors

, 2015
Total ionizing dose (TID) effects on carbon nanotube network transistors were experimentally evaluated using 60Co gamma-ray irradiation up to 50 kGy(Si).
648303, Koshio, Shigeki, 648304, 648305, 648306, Ishii, Satoshi, 648299, 濱野 毅, 648300, 648301, 648302, Enomoto, Shotaro, 648298, Konishi, Teruaki, 小塩 成基, Hamano, Tsuyoshi, 小西 輝昭, Hirao, Toshio, 平尾 敏雄, 648307, 648308, Yabe, Daisuke   +21 more
core  

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA [PDF]

, 2014
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID ...
Wilcox, Edward P., Boutte, Alvin J., Topper, Alyson D., Casey, Megan C., Cochran, Donna J., Ladbury, Raymond L., Pellish, Jonathan A., O'Bryan, Martha V., Campola, Michael J., Gigliuto, Robert A., Buchner, Stephen P., Lauenstein, Jean-Marie, Berg, Melanie D., Violette, Daniel P., LaBel, Kenneth A., Chen, Dakai   +15 more
core  

Synergistic Effect of TID and SEE in 130 nm 7T SOI SRAM

Yuanzineng kexue jishu
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD).
XIAO Shuyan1, GUO Gang1, WANG Linfei2, ZHANG Zheng1, CHEN Qiming1, GAO Linchun2, WANG Chunlin2, ZHANG Fuqiang1, ZHAO Shuyong1, LIU Jiancheng1
doaj   +1 more source