Compendium of Total Ionizing Dose Effects Results on Commercial Power Regulators
This paper presents the latest test results of certain power regulator devices under total ionizing dose (TID) irradiation. The devices under test are characterized on high dose rates and potentially low dose rates if the semiconductors are composed of ...
Aksteiner, Niklas, Budroweit, Jan
core +1 more source
Evaluation of high performance converters under low dose rate total ionizing dose (TID) testing for NASA programs [PDF]
This paper reports the results of low dose rate (0.02-0.04 Rads(Si)/sec) TID tests performed on several types of high performance analog-to-digital and digital-to-analog converters (ADCs/DACs). The test results showed that BiCMOS parts were very susceptible to radiation damage at very low levels [2-5 kRads(Si)] and the bipolar parts showed higher ...
A.K. Sharma, K. Sahu, S. Kniffin
openaire +1 more source
Total Ionizing Dose testing of shunt reference as battery balancer for space applications
This paper presents and compares the Total Ionizing Dose (TID) testing and results of commercial off-the-shelf (COTS) shunt references used as battery balancers under 60Co irradiation at progressive dose rates in biased and unbiased ...
Aksteiner, Niklas +6 more
core +1 more source
Investigating radiation effects on LSF0102 level shifters [PDF]
We present the results of a Total Ionizing Dose (TID) test on Texas Instruments LSF0102 level shifters irradiated with 60Co gamma rays up to a total dose of 20 kGy.
Casolaro Pierluigi +8 more
doaj +1 more source
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent +13 more
core +1 more source
Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors
The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented.
Zujun Wang +6 more
doaj +1 more source
Radiation hardness study of positive LDO voltage regulators [PDF]
Two linear voltage regulators LS2-5V and LM2931 (output voltage of 5.0 V) were studied experimentally on their hardness to the radiation total ionizing dose (TID) effects.
Rybalka Sergey +2 more
doaj +1 more source
An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied
Wen-Ching Hsieh +2 more
doaj +1 more source
Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong +3 more
doaj +1 more source
Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park +5 more
doaj +1 more source

