Results 31 to 40 of about 8,141,274 (193)

Compendium of Total Ionizing Dose Effects Results on Commercial Power Regulators

open access: yes, 2022
This paper presents the latest test results of certain power regulator devices under total ionizing dose (TID) irradiation. The devices under test are characterized on high dose rates and potentially low dose rates if the semiconductors are composed of ...
Aksteiner, Niklas, Budroweit, Jan
core   +1 more source

Evaluation of high performance converters under low dose rate total ionizing dose (TID) testing for NASA programs [PDF]

open access: yes1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385), 2002
This paper reports the results of low dose rate (0.02-0.04 Rads(Si)/sec) TID tests performed on several types of high performance analog-to-digital and digital-to-analog converters (ADCs/DACs). The test results showed that BiCMOS parts were very susceptible to radiation damage at very low levels [2-5 kRads(Si)] and the bipolar parts showed higher ...
A.K. Sharma, K. Sahu, S. Kniffin
openaire   +1 more source

Total Ionizing Dose testing of shunt reference as battery balancer for space applications

open access: yes, 2023
This paper presents and compares the Total Ionizing Dose (TID) testing and results of commercial off-the-shelf (COTS) shunt references used as battery balancers under 60Co irradiation at progressive dose rates in biased and unbiased ...
Aksteiner, Niklas   +6 more
core   +1 more source

Investigating radiation effects on LSF0102 level shifters [PDF]

open access: yesEPJ Web of Conferences
We present the results of a Total Ionizing Dose (TID) test on Texas Instruments LSF0102 level shifters irradiated with 60Co gamma rays up to a total dose of 20 kGy.
Casolaro Pierluigi   +8 more
doaj   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

open access: yes, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent   +13 more
core   +1 more source

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

open access: yesAIP Advances, 2015
The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented.
Zujun Wang   +6 more
doaj   +1 more source

Radiation hardness study of positive LDO voltage regulators [PDF]

open access: yesEPJ Web of Conferences
Two linear voltage regulators LS2-5V and LM2931 (output voltage of 5.0 V) were studied experimentally on their hardness to the radiation total ionizing dose (TID) effects.
Rybalka Sergey   +2 more
doaj   +1 more source

An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device

open access: yesSensors, 2014
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied
Wen-Ching Hsieh   +2 more
doaj   +1 more source

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

open access: yesMicromachines, 2021
Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-
Chen Chong   +3 more
doaj   +1 more source

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

open access: yesJournal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park   +5 more
doaj   +1 more source

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