Results 31 to 40 of about 554 (150)
An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied
Wen-Ching Hsieh +2 more
doaj +1 more source
Total Ionizing Dose Hardening of 45 nm FD-SOI MOSFETs Using Body-Tie Biasing
The total ionizing dose (TID) effect is a problematic concern in fully depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor transistors (MOSFETs) because of the introduction of the thin buried oxide layer.
Xiaoqiang Liu +5 more
doaj +1 more source
Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects
Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this study, we considered the operating states, dose rates, temperatures, and annealing to analyze the ...
Gyeongyeop Lee +5 more
doaj +1 more source
Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications.
Shuyun Zheng, Yun Zeng, Zhuojun Chen
doaj +1 more source
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song +5 more
wiley +1 more source
Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics
Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low $10^{11}$ cm $^{\mathrm {-2}}$ eV $^{\mathrm {-1}}$ range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al2O3/La2O3 and Al2O3/La1.8Y0.2O3 gate oxides. Charge
Shufeng Ren +14 more
openaire +1 more source
Combined effect of total ionizing dose and electromagnetic pulse on bipolar junction transistor [PDF]
Electronic systems in complex radiation environments, such as space applications and nuclear power plants, face simultaneous threats from the cumulative damage of Total Ionizing Dose (TID) and the transient disturbances of Electromagnetic Pulse (EMP ...
Meiqing Zhong +9 more
doaj +1 more source
The Europa Clipper mission will repeatedly pass in and out of the Jovian radiation belts as it explores the icy moon. In order to evaluate the effectiveness of any safety margins for total ionizing dose (TID) ratings on Europa Clipper spacecraft ...
A. Andersen, W. Kim, S. McClure, I. Jun
doaj +1 more source
Operating System Influence on VLSI Radiation Resistance
The article presents a comparative analysis of radiation resistance levels of complex-functional VLSI when using an operating system (OS) for software development in comparison with the traditional approach based on a superloop.
Mariia A. Rogovaia +3 more
doaj +1 more source
Directed differentiation of pluripotent stem cells into functional pancreatic β cells have emerged as a promising strategy for the radical treatment of type 1 diabetes, with preclinical and early clinical evidence demonstrating reversal of hyperglycemia and insulin independence.
Zifan Li, Yu Kang, Yuyu Niu
wiley +1 more source

