Total Ionizing Dose (TID) Effects of γ Ray Radiation on Switching Behaviors of Ag/AlO x /Pt RRAM Device [PDF]
Nanoscale Research Letters, 2014 Abstract The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance ...
Jer-Chyi Wang, Chao-Sung Lai, Fang Yuan
exaly +5 more sources
COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis
Journal of Physics: Conference Series, 2022 Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Alberton, Saulo G.P.N. +9 more
core +4 more sources
Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices [PDF]
MicromachinesThe working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in ...
Hao Yu +5 more
doaj +2 more sources
Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs [PDF]
MicromachinesIn this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan +7 more
doaj +2 more sources
Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
doaj +1 more source
Frontiers in Physics, 2022 The TID (total ionizing dose) in-situ experiments of LC1020B, an anti-fuse FPGA (Field Programmable Gate Array) device, were designed and carried out under different dose rates, and the influence of dose rate on the TID effect of FPGA was studied.
Minqiang Liu +3 more
doaj +1 more source
Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO<sub>2</sub> interface trap energy states in MOS devices. [PDF]
Sci RepThis paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO[Formula: see text] interface traps in MOS devices, and their density of states across the energy band in a non-uniform manner. The model incorporates the DCIV technique to determine the density of states of interface traps and accounts for quantum tunneling (QT)
Khoshnoud A, Yavandhassani J.
europepmc +4 more sources
Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs
AIP Advances, 2022 Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li +8 more
doaj +1 more source
Design, implementation and test of a space qualified dosimeter for total ionizing dose measurement [PDF]
مجله علوم و فنون هستهای, 2022 The space environment can cause severe problems for electronic circuits. The plasma, radiation, debris, and no thermal convection are some space environment-specific conditions.
R. Amjadifard +2 more
doaj +1 more source
Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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