Results 11 to 20 of about 558 (154)

Investigation of TID-induced capacitance variation in GaAs edge-lift capacitors and its effect on RF impedance matching [PDF]

Scientific Reports
This paper investigates the total ionizing dose response of passive components fabricated in a commercial GaAs process, with a focus on dose-dependent capacitance variation in fringe-field–dominant structures.
Min-Su Kim, Hyeon Jun Hwang, Chang Goo Kang, Jeong Min Park   +3 more
doaj   +2 more sources

Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor [PDF]

Micromachines
This paper reports the results of a system-level total ionizing dose (TID) effect simulation study on a SMIC 130 nm LEON2 processor. Firstly, the device-level simulations of the 130 nm NMOS transistors are performed using the Sentaurus TCAD software to ...
Yi Liu, Yuchen Liu, Xinfang Liao, Changqing Xu, Yangchen He, Yintang Yang   +5 more
doaj   +2 more sources

Charge Trapping Effects on n−MOSFET Current Mirrors Under TID Radiation [PDF]

Micromachines
This study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the ...
Dorsaf Aguir, Sedki Amor, Laurent A. Francis, Mohsen Machhout   +3 more
doaj   +2 more sources

Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel [PDF]

Sensors
A 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS
Pedro Santos, Idham Hafizh, Paul Leroux, Guy Meynants   +3 more
doaj   +2 more sources

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem [PDF]

Micromachines, 2023
Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary.
Lihong Yang, Zhumeng Li, Guangbao Shan, Qijun Lu, Yu Fu   +4 more
doaj   +2 more sources

Radiation‐Hardened Perovskite Solar Cells Enabled by Redox‐Active V2Ox Hole Transport Layer for Space Applications [PDF]

Small Science, Volume 6, Issue 6, June 2026.
A redox‐active V2Ox/self‐assembled layer bilayer hole transport layer improves the proton radiation resilience of perovskite solar cells for space applications. The V2Ox interface suppresses irradiation‐induced metallic Pb formation while buffering interfacial degradation, highlighting metal oxide interfacial engineering as a practical route toward ...
EQ Han, Su‐Ho Ahn, Eunyoung Choi, Su‐Min Lee, Jaeho Lee, Bo Wei Zhang, Miaoqiang Lyu, Jung‐Ho Yun   +7 more
wiley   +2 more sources

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices [PDF]

Micromachines
The working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in ...
Hao Yu, Wei Zhou, Hongxia Liu, Shulong Wang, Shupeng Chen, Chang Liu   +5 more
doaj   +2 more sources

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs [PDF]

Micromachines
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan, Hongxia Liu, Menghao Huang, Shulong Wang, Shupeng Chen, Xilong Zhou, Junjie Huang, Chang Liu   +7 more
doaj   +2 more sources

Total Ionizing Dose (TID) effects on finger transistors in a 65nm CMOS process [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
Jiang, Jize, Shu, Wei, Chong, Kwen-Siong, Lin, Tong, Lwin, Ne Kyaw Zwa, Chang, Joseph Sylvester, Liu, Jingyuan   +6 more
openaire   +2 more sources

Total Ionizing Dose (TID) Tests on Non-Volatile Memories: Flash and MRAM [PDF]

2007 IEEE Radiation Effects Data Workshop, 2007
We report on TID tests of magnetoresistive random access memory (MRAM), and advanced 4 Gbit flash memories from three manufacturers. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures.
Nguyen, D. N., Irom, F.
openaire   +1 more source