Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor [PDF]
IEEE Access, 2020 Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools,
Gangping Yan +6 more
doaj +4 more sources
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device [PDF]
Nanoscale Research Letters, 2014 Abstract The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance ...
Fang Yuan, Jer-Chyi Wang, Liyang Pan
exaly +5 more sources
Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs [PDF]
MicromachinesIn this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan +7 more
doaj +2 more sources
Impact of different parameters on the static random access memory under the total ionizing dose
Fushe yanjiu yu fushe gongyi xuebao, 2023 The effect of the total ionizing dose (TID) on the static random access memory (SRAM) is conducted on the 60Co radioactive source in the China Institute of Atomic Energy. The study explores the influence of the device process size, dose rate, temperature
ZHANG Fuqiang +9 more
doaj +1 more source
Frontiers in Physics, 2022 The TID (total ionizing dose) in-situ experiments of LC1020B, an anti-fuse FPGA (Field Programmable Gate Array) device, were designed and carried out under different dose rates, and the influence of dose rate on the TID effect of FPGA was studied.
Minqiang Liu +3 more
doaj +1 more source
Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO<sub>2</sub> interface trap energy states in MOS devices. [PDF]
Sci RepThis paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO[Formula: see text] interface traps in MOS devices, and their density of states across the energy band in a non-uniform manner. The model incorporates the DCIV technique to determine the density of states of interface traps and accounts for quantum tunneling (QT)
Khoshnoud A, Yavandhassani J.
europepmc +4 more sources
Effects of total ionizing dose on transient ionizing radiation upset sensitivity of 40–180 nm SRAMs
AIP Advances, 2022 Effects of total ionizing dose (TID) on the transient radiation upset sensitivity of commercial static random access memories (SRAMs) were investigated.
Junlin Li +8 more
doaj +1 more source
Design, implementation and test of a space qualified dosimeter for total ionizing dose measurement [PDF]
مجله علوم و فنون هستهای, 2022 The space environment can cause severe problems for electronic circuits. The plasma, radiation, debris, and no thermal convection are some space environment-specific conditions.
R. Amjadifard +2 more
doaj +1 more source
System-level testing and qualification of environmental sensors for nuclear decommissioning [PDF]
EPJ Web of Conferences, 2023 In this work, we show the first steps of a systemlevel qualification methodology for a series of Commercial off-the Shelf (COTS) environment sensors subjected to Total Ionizing Dose (TID).
Urena-Acuna A. +7 more
doaj +1 more source
Fushe yanjiu yu fushe gongyi xuebao, 2021 This study investigates the AD574, a 12-bit analog/digital converter (ADC) produced by American Analog Devices, Inc. (ADI) using bipolar/I2L technology. The test samples are subjected to a total ionizing dose (TID) of 400 Gy(Si) under 60Co γ irradiation.
XIANG Chuanfeng +10 more
doaj +1 more source