Results 31 to 40 of about 47,573 (253)

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

IEEE Transactions on Nuclear Science, 2023
Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage
Stefano Bonaldo, En Xia Zhang, Serena Mattiazzo, Alessandro Paccagnella, Simone Gerardin, Ronald D. Schrimpf, Daniel M. Fleetwood   +6 more
openaire   +1 more source

Radiation testing of low cost, commercial off the shelf microcontroller board

Nuclear Engineering and Technology, 2021
The impact of gamma radiation on a commercial off the shelf microcontroller board has been investigated. Three different tests have been performed to ascertain the radiation tolerance of the device from a nuclear decommissioning deployment perspective ...
Tomas Fried, Antonio Di Buono, David Cheneler, Neil Cockbain, Jonathan M. Dodds, Peter R. Green, Barry Lennox, C. James Taylor, Stephen D. Monk   +8 more
doaj   +1 more source

Operating System Influence on VLSI Radiation Resistance

Безопасность информационных технологий, 2023
The article presents a comparative analysis of radiation resistance levels of complex-functional VLSI when using an operating system (OS) for software development in comparison with the traditional approach based on a superloop.
Mariia A. Rogovaia, Denis S. Kostyuchenko, Ilya O. Loskutov, Anastasia V. Ulanova   +3 more
doaj   +1 more source

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018
This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and ...
Slimani, Mariem, Armani, Jean-Marc, Gaillard, Rémi   +2 more
openaire   +2 more sources

Dose rate dependent reduction in chromatin accessibility at transcriptional start sites long time after exposure to gamma radiation

Epigenetics, 2023
Ionizing radiation (IR) impact cellular and molecular processes that require chromatin remodelling relevant for cellular integrity. However, the cellular implications of ionizing radiation (IR) delivered per time unit (dose rate) are still debated.
Hildegunn Dahl, Jarle Ballangby, Torstein Tengs, Marcin W. Wojewodzic, Dag M. Eide, Dag Anders Brede, Anne Graupner, Nur Duale, Ann-Karin Olsen   +8 more
doaj   +1 more source

Development of extendable on-line test system for total ionizing dose effect of microprocessor

He jishu, 2022
BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo, YU Weiyue, LIANG Runcheng, ZHENG Zhirui, GUO Rong   +4 more
doaj   +1 more source

Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

IEEE Access, 2023
Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this study, we considered the operating states, dose rates, temperatures, and annealing to analyze the ...
Gyeongyeop Lee, Minki Suh, Minsang Ryu, Yunjong Lee, Jin-Woo Han, Jungsik Kim   +5 more
doaj   +1 more source

Total ionizing dose effects in bipolar and BiCMOS devices [PDF]

IEEE Radiation Effects Data Workshop, 2005., 2005
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Chavez, Rosa M., Rax, Bernard G., Scheick, Leif Z., Johnston, Allan H.   +3 more
openaire   +3 more sources

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications [PDF]

Journal of Astronomy and Space Sciences, 2016
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary
Mi Young Park, Jang-Soo Chae, Chol Lee, Jungsu Lee, Im Hyu Shin, Ji Eun Kim   +5 more
doaj   +1 more source

Improved buildup model for radiation-induced, defects in MOSFET isolation oxides

Journal of Radiation Research and Applied Sciences, 2022
Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature. In this paper,
Hesham H. Shaker, A.A. Saleh, Mohamed Refky Amin, S.E.D. Habib   +3 more
doaj   +1 more source