Results 21 to 30 of about 49,681 (251)
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages
IEEE Transactions on Device and Materials Reliability, 2023 This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage ...
Sadik İlik, Mustafa Berke Yelten
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Radiation testing of low cost, commercial off the shelf microcontroller board
Nuclear Engineering and Technology, 2021 The impact of gamma radiation on a commercial off the shelf microcontroller board has been investigated. Three different tests have been performed to ascertain the radiation tolerance of the device from a nuclear decommissioning deployment perspective ...
Tomas Fried +8 more
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Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs
IEEE Transactions on Nuclear Science, 2023 Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage
Stefano Bonaldo +6 more
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Operating System Influence on VLSI Radiation Resistance
Безопасность информационных технологий, 2023 The article presents a comparative analysis of radiation resistance levels of complex-functional VLSI when using an operating system (OS) for software development in comparison with the traditional approach based on a superloop.
Mariia A. Rogovaia +3 more
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Evaluation of Total Ionizing Dose Effects on Commercial FRAMs
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018 This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and ...
Slimani, Mariem +2 more
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Epigenetics, 2023 Ionizing radiation (IR) impact cellular and molecular processes that require chromatin remodelling relevant for cellular integrity. However, the cellular implications of ionizing radiation (IR) delivered per time unit (dose rate) are still debated.
Hildegunn Dahl +8 more
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Development of extendable on-line test system for total ionizing dose effect of microprocessor
He jishu, 2022 BackgroundCompared with transistors and small-scale integrated circuits, the total ionizing dose (TID) effect and testing of multifunctional large scale integrated microprocessors are more complex. The difficulty of testing is to analyze the failure mode
CHEN Faguo +4 more
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Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects
IEEE Access, 2023 Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this study, we considered the operating states, dose rates, temperatures, and annealing to analyze the ...
Gyeongyeop Lee +5 more
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Total ionizing dose effects in bipolar and BiCMOS devices [PDF]
IEEE Radiation Effects Data Workshop, 2005., 2005 This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Chavez, Rosa M. +3 more
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Improved buildup model for radiation-induced, defects in MOSFET isolation oxides
Journal of Radiation Research and Applied Sciences, 2022 Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defects during the radiation exposure are available in literature. In this paper,
Hesham H. Shaker +3 more
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