Results 1 to 10 of about 807,634 (264)

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

IEEE Transactions on Nuclear Science, 2013
Jeffrey L Titus
exaly  

Predictors of outcome after single-event multilevel surgery in children with cerebral palsy

Bone and Joint Journal, 2016
exaly  

LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

IEEE Transactions on Nuclear Science
Arijit Sengupta, Andrew L Sternberg, S Islam   +2 more
exaly  

Appreciating the effectiveness of single event effect mitigation techniques

2014 IEEE/AIAA 33rd Digital Avionics Systems Conference (DASC), 2014
openaire   +1 more source

The Effects of Total Ionizing Dose on Single Event Effects

2009
Buchner, S., Roche, N., Bernard, M., Dusseau, L., Morrow, D. Mc   +4 more
openaire   +1 more source

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature [PDF]

Sensors, 2018
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola, Ahmad Al Youssef, Samuel Ducret, Franck Perrier, Raphael Buiron, Olivier Gilard, Julien Mekki, Mathieu Boutillier, Guillaume Hubert, Christian Poivrey   +9 more
doaj   +4 more sources

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions [PDF]

Micromachines
GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate ...
Xinxiang Zhang, Yanrong Cao, Chuan Chen, Linshan Wu, Zhiheng Wang, Shuo Su, Weiwei Zhang, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +2 more sources

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits [PDF]

Sensors, 2020
It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time ...
Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, Ickhyun Song   +8 more
doaj   +2 more sources

Single event effects in carbon nanotube electronics

Nano Research
Recent studies on carbon nanotube (CNT) field-effect transistors (FETs) and integrated circuits (ICs) have shown their potential in radiation tolerance.
Ruhai Liu, Yifu Sun, Rui Chen, Lingyu Zhang, Qian Chen, Can Yang, Huiping Zhu, Peng Lu, Zhiyong Zhang, Maguang Zhu   +9 more
doaj   +2 more sources

Bootstrapped Driver and the Single-Event-Upset Effect [PDF]

IEEE Transactions on Circuits and Systems I: Regular Papers, 2020
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo, Mohamed A. Abufalgha, Alex Yakovlev, Basel Halak   +3 more
openaire   +2 more sources