Results 1 to 10 of about 1,891 (120)
Bootstrapped Driver and the Single-Event-Upset Effect [PDF]
As VLSI circuits are progressing in very Deep Submicron (DSM) regime without decreasing chip area, the importance of global interconnects increases but at the cost of performance and power consumption. This work proposes a low power circuit for driving a global interconnect at voltages close to the noise level. In order to address ultra-low power (ULP)
Mohammed Al-daloo +3 more
openaire +3 more sources
BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
doaj +1 more source
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash +6 more
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Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]
Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar +4 more
doaj +1 more source
Triple Modular Redundancy verification via heuristic netlist analysis [PDF]
Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
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Single event effects qualificatoin of integrated circuits
The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant ...
Armen V. Sogoyan +2 more
doaj +1 more source
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
doaj +1 more source
Effect of Temperature on Single Event Latchup Sensitivity [PDF]
Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SEL has been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping ...
S. Guagliardo +7 more
openaire +2 more sources
NAIRAS Model Run‐On‐Request Service at CCMC
The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) version 3 model is available to the community through the Community Coordinated Modeling Center run‐on‐request (RoR) service.
C. J. Mertens +8 more
doaj +1 more source
The device downscaling of electronic components has given rise to the need to consider specific failures in onboard airplane electronics. Single Event Effects (SEE) are a kind of failures that occur due to radiation in the atmosphere.
Hugo Cintas +7 more
doaj +1 more source

