Results 1 to 10 of about 133,634 (266)

Experimental Study on the Space Electrostatic Discharge Effect and the Single Event Effect of SRAM Devices for Satellites

open access: yesApplied Sciences, 2022
Space Electrostatic Discharge Effect (SESD) and Single Event Effect (SEE) are two major space environmental factors that cause spacecraft failure. Previous studies have established that both can lead to soft errors such as upset of memory cells.
Xuan Wang   +5 more
doaj   +1 more source

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node

open access: yesApplied Sciences, 2022
Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash   +6 more
doaj   +1 more source

SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview

open access: yesMicromachines, 2022
Microprocessors use static random-access memory (SRAM) cells in the cache memory design. As a part of the central computing component, their performance is critical.
Waqas Gul   +2 more
doaj   +1 more source

SEDAR: Soft Error Detection and Automatic Recovery in High Performance Computing Systems

open access: yesJournal of Computer Science and Technology, 2020
Reliability and fault tolerance have become aspects of growing relevance in the field of HPC, due to the increased probability that faults of different kinds will occur in these systems.
Diego Montezanti
doaj   +1 more source

Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

open access: yesSensors, 2021
Aerospace equipages encounter potential radiation footprints through which soft errors occur in the memories onboard. Hence, robustness against radiation with reliability in memory cells is a crucial factor in aerospace electronic systems.
Bharathi Raj Muthu   +6 more
doaj   +1 more source

Optimized Multiple-Bit-Flip Soft-Errors-Tolerant TCAM using Machine Learning

open access: yesJurnal Nasional Teknik Elektro, 2022
Soft errors from radiations can change the data in electronic devices especially memory cells such as in TCAMs. The soft errors cause bit-flip errors that makes the data are corrupted in the network.
Infall Syafalni, Trio Adiono
doaj   +1 more source

In-Pipeline Processor Protection against Soft Errors

open access: yesJournal of Low Power Electronics and Applications, 2023
The shrinking of technology nodes allows higher performance, but susceptibility to soft errors increases. The protection has been implemented mainly by lockstep or hardened process techniques, which results in a lower frequency, a larger area, and higher
Ján Mach   +2 more
doaj   +1 more source

Approximate Triple Modular Redundancy: A Survey

open access: yesIEEE Access, 2020
In recent years, approximate computing (AC) has attracted attention owing to its tradeoff between the exactness of computations and performance gains. AC has also been probed for the technique of Triple modular redundancy (TMR). TMR is a well-known fault
Tooba Arifeen   +2 more
doaj   +1 more source

Generalizability of Soft Sensors for Bioprocesses through Similarity Analysis and Phase-Dependent Recalibration

open access: yesSensors, 2023
A soft sensor concept is typically developed and calibrated for individual bioprocesses in a time-consuming manual procedure. Following that, the prediction performance of these soft sensors degrades over time, due to changes in raw materials, biological
Manuel Siegl   +6 more
doaj   +1 more source

Modeling Application-Level Soft Error Effects for Single-Event Multi-Bit Upsets

open access: yesIEEE Access, 2019
Transient errors induced by radiations cause bit-flips in flip-flops (flip-flop soft errors). Modeling the error resilience level of a target system for flip-flop soft errors is a crucial step to achieve a cost-effective error resilience solution.
Hyungmin Cho, Kon-Woo Kwon
doaj   +1 more source

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