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Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature [PDF]
Sensors, 2018 This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K.
Laurent Artola +9 more
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Applied Sciences, 2022 The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects.
Heng An +6 more
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He jishu, 2023 BackgroundThe space environment contains numerous high-energy particles, and a single high-energy particle passing through a spacecraft shell bombards the electronic devices within, triggering single-particle effects such as device logic state upset and ...
CHEN Qiming +9 more
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A system-level method for hardening phase-locked loop to single-event effects
Materials Research Express, 2022 To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed.
Bin Liang +6 more
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Single event effects qualificatoin of integrated circuits
Безопасность информационных технологий, 2020 The goal of qualification or monitoring of electronic device radiation testings is to ensure that devices meet the set of requirements. In some cases, this can be achieved without full characterization of radiation behavior, which leads to significant ...
Armen V. Sogoyan +2 more
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Triple Modular Redundancy verification via heuristic netlist analysis [PDF]
PeerJ Computer Science, 2015 Triple Modular Redundancy (TMR) is a common technique to protect memory elements for digital processing systems subject to radiation effects (such as in space, high-altitude, or near nuclear sources). This paper presents an approach to verify the correct
Giovanni Beltrame
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Radiation, 2021 This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.)
Arijit Karmakar +4 more
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Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions
Aerospace, 2020 Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects.
Ygor Q. Aguiar +6 more
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Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
Micromachines, 2023 A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
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Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node
Applied Sciences, 2022 Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should
Christopher J. Elash +6 more
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